18510370. AIR GAP FORMATION BETWEEN GATE SPACER AND EPITAXY STRUCTURE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
AIR GAP FORMATION BETWEEN GATE SPACER AND EPITAXY STRUCTURE
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Kai-Hsuan Lee of Hsinchu City (TW)
Wei-Yang Lee of Taipei City (TW)
Feng-Cheng Yang of Hsinchu County (TW)
Yen-Ming Chen of Hsinchu County (TW)
AIR GAP FORMATION BETWEEN GATE SPACER AND EPITAXY STRUCTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18510370 titled 'AIR GAP FORMATION BETWEEN GATE SPACER AND EPITAXY STRUCTURE
Simplified Explanation
The semiconductor device described in the abstract includes source/drain regions, a gate structure, a first gate spacer, and a dielectric material. The source/drain regions are located over a substrate, with the gate structure positioned laterally between them. The first gate spacer is situated on a first sidewall of the gate structure, separated from a first source/drain region by a void region. The dielectric material is positioned between the first source/drain region and the void region, with a gradient ratio of a first chemical element to a second chemical element.
- Source/drain regions located over a substrate
- Gate structure positioned laterally between the source/drain regions
- First gate spacer on a first sidewall of the gate structure
- Dielectric material with a gradient ratio of chemical elements
- Void region separating the first gate spacer from the first source/drain region
Potential Applications
- Advanced semiconductor devices - High-performance electronic components - Integrated circuits
Problems Solved
- Enhancing performance and efficiency of semiconductor devices - Improving reliability and durability of electronic components - Increasing speed and functionality of integrated circuits
Benefits
- Greater control over semiconductor device properties - Enhanced overall device performance - Improved manufacturing processes and yields
Original Abstract Submitted
A semiconductor device includes source/drain regions, a gate structure, a first gate spacer, and a dielectric material. The source/drain regions are over a substrate. The gate structure is laterally between the source/drain regions. The first gate spacer is on a first sidewall of the gate structure, and spaced apart from a first one of the source/drain regions at least in part by a void region. The dielectric material is between the first one of the source/drain regions and the void region. The dielectric material has a gradient ratio of a first chemical element to a second chemical element.
