International business machines corporation (20240096887). MULTI-VT SOLUTION FOR REPLACEMENT METAL GATE BONDED STACKED FET simplified abstract
Contents
- 1 MULTI-VT SOLUTION FOR REPLACEMENT METAL GATE BONDED STACKED FET
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 MULTI-VT SOLUTION FOR REPLACEMENT METAL GATE BONDED STACKED FET - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
MULTI-VT SOLUTION FOR REPLACEMENT METAL GATE BONDED STACKED FET
Organization Name
international business machines corporation
Inventor(s)
Ruqiang Bao of Niskayuna NY (US)
Dechao Guo of Niskayuna NY (US)
Junli Wang of Slingerlands NY (US)
Heng Wu of Santa Clara CA (US)
MULTI-VT SOLUTION FOR REPLACEMENT METAL GATE BONDED STACKED FET - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240096887 titled 'MULTI-VT SOLUTION FOR REPLACEMENT METAL GATE BONDED STACKED FET
Simplified Explanation
The semiconductor device described in the abstract includes a substrate, a set of first transistors with first gates and first dielectrics, an insulating layer, and a set of second transistors with second gates and second dielectrics.
- The first dielectrics are connected to the sidewalls of the corresponding first gates.
- The second dielectrics are connected to the insulating layer.
Potential Applications
This technology could be applied in the development of advanced semiconductor devices for various electronic applications, such as integrated circuits, microprocessors, and memory devices.
Problems Solved
This innovation helps in improving the performance and efficiency of semiconductor devices by enhancing the isolation and control of the transistors, reducing leakage currents, and increasing overall reliability.
Benefits
The benefits of this technology include higher speed operation, lower power consumption, improved integration density, and enhanced reliability of semiconductor devices.
Potential Commercial Applications
The potential commercial applications of this technology could be in the fields of consumer electronics, telecommunications, automotive electronics, and industrial automation.
Possible Prior Art
One possible prior art could be the use of similar dielectric materials and gate structures in semiconductor devices to improve performance and reliability.
What are the specific electronic applications where this technology could be most beneficial?
This technology could be most beneficial in applications requiring high-speed operation, low power consumption, and high integration density, such as in mobile devices, data centers, and IoT devices.
How does this innovation compare to existing semiconductor device technologies in terms of performance and efficiency?
This innovation offers improved isolation and control of transistors, reduced leakage currents, and enhanced reliability compared to existing technologies, leading to higher performance and efficiency in semiconductor devices.
Original Abstract Submitted
a semiconductor device includes a substrate; a set of first transistors positioned on an upper surface of the substrate, each of the set of first transistors comprising a first gate and a first dielectric; an insulating layer positioned on an upper surface of the set of first transistors; and a set of second transistors positioned over the set of first transistors and with the set of first transistors on an upper surface of the insulating layer, each of the set of second transistors having a second gate and a second dielectric; wherein each of the first dielectrics is connected to a sidewall of each of a corresponding first gate; and wherein each of the second dielectrics is connected to the insulating layer.
