18478410. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Seungmin Song of Hwaseong-si (KR)
Jaehyeoung Ma of Seongnam-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18478410 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The abstract describes a semiconductor device that includes a substrate with a division region, first and second active patterns, and gate electrodes. The first and second active patterns are spaced apart from each other in a direction perpendicular to the division region. The device also includes first and second channel patterns on the first and second active patterns, respectively.
- The first active pattern has a smaller width in the first direction compared to the second active pattern.
- The end portion of the first channel pattern adjacent to the division region includes a protruding portion that extends in the first direction and has a triangle shape in a plan view.
Potential Applications:
- This semiconductor device can be used in various electronic devices such as smartphones, tablets, and computers.
- It can be utilized in integrated circuits for data processing, memory storage, and signal amplification.
Problems Solved:
- The device allows for efficient use of space on the substrate by having active patterns and gate electrodes arranged in a compact manner.
- The protruding portion of the first channel pattern helps in improving the performance and efficiency of the device by enhancing the control of electrical signals.
Benefits:
- The compact arrangement of active patterns and gate electrodes allows for higher integration density, enabling more functionality in a smaller area.
- The protruding portion of the first channel pattern improves the control of electrical signals, leading to enhanced device performance and efficiency.
Original Abstract Submitted
A semiconductor device including a substrate including a division region extending in a first direction, first and second active patterns on the substrate with the division region interposed therebetween, the first and the second active patterns being spaced apart from each other in a second direction perpendicular to the first direction, gate electrodes extending in the first direction and crossing the first and second active patterns, a first channel pattern on the first active pattern, and a second channel pattern on the second active pattern may be provided. The smallest width of the first active pattern may be smaller than the smallest width of the second active pattern, in the first direction. An end portion of the first channel pattern adjacent to the division region may include a protruding portion extending in the first direction, and the protruding portion may have a triangle shape in a plan view.
