17866966. MULTI-CHANNEL FIELD EFFECT TRANSISTORS WITH ENHANCED MULTI-LAYERED SOURCE/DRAIN REGIONS simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
MULTI-CHANNEL FIELD EFFECT TRANSISTORS WITH ENHANCED MULTI-LAYERED SOURCE/DRAIN REGIONS
Organization Name
Inventor(s)
Jungtaek Kim of Yongin-si (KR)
MULTI-CHANNEL FIELD EFFECT TRANSISTORS WITH ENHANCED MULTI-LAYERED SOURCE/DRAIN REGIONS - A simplified explanation of the abstract
This abstract first appeared for US patent application 17866966 titled 'MULTI-CHANNEL FIELD EFFECT TRANSISTORS WITH ENHANCED MULTI-LAYERED SOURCE/DRAIN REGIONS
Simplified Explanation
The patent application describes a semiconductor device with a vertical stack of semiconductor channel regions, a gate electrode, and a source/drain region. The source/drain region consists of three epitaxial layers with different electrical characteristics, all made of silicon germanium (SiGe) with varying levels of germanium (Ge).
- The semiconductor device has a vertical stack of multiple spaced-apart semiconductor channel regions.
- A gate electrode is present on the active region and between the spaced-apart channel regions.
- The source/drain region contacts the spaced-apart channel regions.
- The source/drain region consists of three epitaxial layers with different electrical characteristics.
- Each epitaxial layer is made of silicon germanium (SiGe) with varying levels of germanium (Ge).
- The first epitaxial layer contacts the active region and each of the spaced-apart channel regions.
- The second epitaxial layer contacts a portion of the upper surface of the first epitaxial layer.
- The third epitaxial layer contacts another portion of the upper surface of the first epitaxial layer.
- The level of germanium in the third epitaxial layer is higher than the level in the second epitaxial layer, which is higher than the level in the first epitaxial layer.
Potential Applications
- Semiconductor devices with improved performance and functionality.
- High-speed and low-power electronic devices.
- Applications in telecommunications, computing, and consumer electronics.
Problems Solved
- Enhances the performance and functionality of semiconductor devices.
- Addresses the need for high-speed and low-power electronic devices.
- Provides a solution for improving the efficiency and reliability of electronic systems.
Benefits
- Improved performance and functionality of semiconductor devices.
- Increased speed and reduced power consumption.
- Enhanced efficiency and reliability of electronic systems.
Original Abstract Submitted
A semiconductor device includes a semiconductor active region having a vertical stack of multiple spaced-apart semiconductor channel regions thereon. A gate electrode extends on the active region and between the spaced-apart channel regions. A source/drain region contacts the spaced-apart channel regions. The source/drain region includes a stack of at least first, second and third epitaxial layers having different electrical characteristics. The first epitaxial layer contacts the active region and each of the spaced-apart channel regions. The second epitaxial layer contacts a first portion of an upper surface of the first epitaxial layer. The third epitaxial layer contacts a second portion of the upper surface of the first epitaxial layer. Each of the first, second and third epitaxial layers includes silicon germanium (SiGe) with unequal levels of germanium (Ge) therein. A level of germanium in the third epitaxial layer exceeds a level of germanium in the second epitaxial layer, which exceeds a level of germanium in the first epitaxial layer.
