18097249. SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Po-Chin Chang of Taichung (TW)

Lin-Yu Huang of Hsinchu (TW)

Li-Zhen Yu of New Taipei (TW)

Yuting Cheng of Taoyuan (TW)

Sung-Li Wang of Hsinchu (TW)

Pinyen Lin of Rochester NY (US)

SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18097249 titled 'SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME

Simplified Explanation

The present disclosure describes a semiconductor device structure with a unique configuration of source/drain regions and silicide layers, along with methods of forming the same.

• The structure includes a first source/drain region in a PFET region and a second source/drain region in an NFET region, with the second region having a dipole region.
• Different materials are used for the first, second, and third silicide layers, which are in contact with the respective source/drain regions.
• The structure also includes conductive features and an interconnect structure.

Potential Applications

This technology could be applied in the semiconductor industry for the development of advanced integrated circuits with improved performance and efficiency.

Problems Solved

This innovation addresses the challenges in enhancing the functionality and speed of semiconductor devices by optimizing the configuration of source/drain regions and silicide layers.

Benefits

The benefits of this technology include increased speed, reduced power consumption, and enhanced reliability of semiconductor devices.

Potential Commercial Applications

Potential commercial applications of this technology include the production of high-performance computer processors, mobile devices, and other electronic components.

Possible Prior Art

Prior art in the field of semiconductor device structures may include similar configurations of source/drain regions and silicide layers, but the specific combination described in this disclosure may be novel and inventive.

How does this technology compare to existing semiconductor device structures in terms of performance and efficiency?

This article does not provide a direct comparison with existing semiconductor device structures to evaluate the performance and efficiency improvements offered by the described innovation.

What are the specific fabrication methods used to form the unique configuration of source/drain regions and silicide layers in this semiconductor device structure?

The article does not delve into the detailed fabrication processes involved in creating the specific configuration of source/drain regions and silicide layers in the semiconductor device structure.

Original Abstract Submitted

Embodiments of the present disclosure provide semiconductor device structures and methods of forming the same. The structure includes a first source/drain region disposed in a PFET region and a second source/drain region disposed in an NFET region. The second source/drain region comprises a dipole region. The structure further includes a first silicide layer disposed on and in contact with the first source/drain region, a second silicide layer disposed on and in contact with the first silicide layer, and a third silicide layer disposed on and in contact with the dipole region of the second source/drain region. The first, second, and third silicide layers include different materials. The structure further includes a first conductive feature disposed over the first source/drain region, a second conductive feature disposed over the second source/drain region, and an interconnect structure disposed on the first and second conductive features.