17815187. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

RYONG Ha of SEOUL (KR)

SEOKHOON Kim of SUWON-DI (KR)

DOHYUN Go of SUWON-SI (KR)

JUNGTAEK Kim of YONGIN-SI (KR)

MOON SEUNG Yang of HWASEONG-SI (KR)

SANGIL Lee of ANSAN-SI (KR)

SEOJIN Jeong of INCHEON (KR)

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 17815187 titled 'SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

Simplified Explanation

The patent application describes a semiconductor device that includes a substrate with an active pattern, a channel pattern, a source/drain pattern, and a gate electrode. The gate electrode has multiple portions between the semiconductor patterns, and the source/drain pattern has a buffer layer and a main layer.

• The semiconductor device has a substrate with an active pattern.
• The channel pattern is vertically stacked and spaced apart semiconductor patterns.
• The source/drain pattern is connected to the semiconductor patterns.
• The gate electrode is disposed on the semiconductor patterns and has multiple portions.
• The source/drain pattern includes a buffer layer and a main layer.
• The buffer layer contains silicon germanium (SiGe) and has a first semiconductor layer and a first reflow layer.
• The germanium concentration of the first reflow layer is lower than that of the first semiconductor layer.

Potential Applications

• Integrated circuits
• Microprocessors
• Transistors
• Memory devices

Problems Solved

• Improved performance and efficiency of semiconductor devices
• Enhanced conductivity and carrier mobility
• Reduction of power consumption and heat generation

Benefits

• Higher speed and performance of electronic devices
• Lower power consumption and heat dissipation
• Increased integration density and miniaturization
• Improved reliability and durability of semiconductor devices

Original Abstract Submitted

A semiconductor device includes a substrate that includes an active pattern, a channel pattern disposed on the active pattern, where the channel pattern includes a plurality of semiconductor patterns that are vertically stacked and spaced apart from each other, a source/drain pattern connected to the semiconductor patterns, and a gate electrode disposed on the semiconductor patterns. The gate electrode includes a plurality of portions that are respectively interposed between the semiconductor patterns, and the source/drain pattern includes a buffer layer in contact with the semiconductor patterns and a main layer disposed on the buffer layer. The buffer layer contains silicon germanium (SiGe) and includes a first semiconductor layer and a first reflow layer thereon. A germanium concentration of the first reflow layer is less than that of the first semiconductor layer.