18518706. SHARED WELL STRUCTURE MANUFACTURING METHOD simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
SHARED WELL STRUCTURE MANUFACTURING METHOD
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
SHARED WELL STRUCTURE MANUFACTURING METHOD - A simplified explanation of the abstract
This abstract first appeared for US patent application 18518706 titled 'SHARED WELL STRUCTURE MANUFACTURING METHOD
Simplified Explanation
The method of manufacturing an IC structure involves configuring n-well and p-well in a first IC die to have specific portions and forming IC devices with pickup structures connected to the wells.
- Configuring n-well and p-well in a specific manner in the IC die
- Forming IC devices with pickup structures connected to the wells
- Including PMOS transistor in n-well and NMOS transistor in p-well
Potential Applications
- Semiconductor industry
- Integrated circuit manufacturing
Problems Solved
- Efficient configuration of n-well and p-well in IC structure
- Improved connectivity in IC devices
Benefits
- Enhanced performance of PMOS and NMOS transistors
- Increased reliability of IC devices
Original Abstract Submitted
A method of manufacturing an IC structure includes configuring each of an n-well and a p-well in a first IC die to have a first portion extending in a first direction and second and third portions extending from the first portion in a second direction perpendicular to the first direction, and forming IC devices including a first pickup structure electrically connected to the n-well and a second pickup structure electrically connected to the p-well. Forming the IC devices includes forming a PMOS transistor in the second or third portion of the n-well and forming an NMOS transistor in the second or third portion of the p-well.
