Intel corporation (20240105453). HIGH ASPECT RATIO METAL GATE CUTS simplified abstract

HIGH ASPECT RATIO METAL GATE CUTS

Organization Name

intel corporation

Inventor(s)

Reza Bayati of Portland OR (US)

Matthew J. Prince of Portland OR (US)

Alison V. Davis of Portland OR (US)

Ramy Ghostine of Portland OR (US)

Piyush M. Sinha of Portland OR (US)

Oleg Golonzka of Beaverton OR (US)

Swapnadip Ghosh of Hillsboro OR (US)

Manish Sharma of Portland OR (US)

HIGH ASPECT RATIO METAL GATE CUTS - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240105453 titled 'HIGH ASPECT RATIO METAL GATE CUTS

Simplified Explanation

The patent application describes techniques for forming semiconductor devices with gate cuts having a very high aspect ratio, enabling densely integrated devices.

• Semiconductor devices with gate cuts having a very high aspect ratio (e.g., 5:1 or greater)
• Gate cuts formed through the entire thickness of the gate structure
• Conductive material forming part of a transistor gate structure
• Semiconductor region such as a fin or nanowires/nanoribbons
• Plasma etching process used to form gate cuts with high height-to-width aspect ratio

Potential Applications

The technology can be applied in:

• Advanced semiconductor manufacturing
• High-density integrated circuits
• Nanoelectronics

Problems Solved

• Increasing integration density in semiconductor devices
• Enhancing transistor performance
• Enabling more efficient use of space on semiconductor chips

Benefits

• Improved device performance
• Higher integration density
• Enhanced functionality in smaller form factors

Potential Commercial Applications

• Mobile devices
• Internet of Things (IoT) devices
• Wearable technology

Possible Prior Art

One possible prior art could be the use of traditional gate structures with lower aspect ratios in semiconductor devices.

How does the high aspect ratio of the gate cuts impact the overall performance of the semiconductor devices?

The high aspect ratio of the gate cuts allows for more precise control of the transistor operation, potentially leading to improved performance in terms of speed and power efficiency.

What materials are commonly used in the fabrication of the gate cuts with high aspect ratios?

Materials such as silicon, silicon germanium, or other semiconductor materials are commonly used in the fabrication of gate cuts with high aspect ratios due to their compatibility with existing semiconductor manufacturing processes.

Original Abstract Submitted

techniques are provided herein to form semiconductor devices that include one or more gate cuts having a very high aspect ratio (e.g., an aspect ratio of 5:1 or greater, such as 10:1). in an example, a semiconductor device includes a conductive material that is part of a transistor gate structure around or otherwise on a semiconductor region. the semiconductor region can be, for example, a fin of semiconductor material that extends between a source region and a drain region, or one or more nanowires or nanoribbons of semiconductor material that extend between a source region and a drain region. the gate structure may be interrupted between two transistors with a gate cut that extends through an entire thickness of the gate structure. a particular plasma etching process may be performed to form the gate cut with a very high height-to-width aspect ratio so as to enable densely integrated devices.