18540524. COMPLEMENTARY TRANSISTOR AND SEMICONDUCTOR DEVICE simplified abstract (Sony Group Corporation)

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COMPLEMENTARY TRANSISTOR AND SEMICONDUCTOR DEVICE

Organization Name

Sony Group Corporation

Inventor(s)

Hidetoshi Oishi of Saga (JP)

Koichi Matsumoto of Kanagawa (JP)

Kazuyuki Tomida of Kanagawa (JP)

COMPLEMENTARY TRANSISTOR AND SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18540524 titled 'COMPLEMENTARY TRANSISTOR AND SEMICONDUCTOR DEVICE

Simplified Explanation

The abstract describes a patent application for a complementary transistor consisting of two transistors with active regions formed by different layers, each with a different conductivity type. Extension layers are provided on insulation regions.

  • The first transistor (TR) and the second transistor (TR) are combined to form a complementary transistor.
  • Active regions of the transistors are created by layering first A layers and first B layers respectively.
  • Surface regions in the base correspond to the first A layers.
  • The first B layers have a different conductivity type from the first A layers.
  • Extension layers of the first B layer are provided on insulation regions.

Potential Applications

This technology could be applied in:

  • Integrated circuits
  • Electronic devices
  • Power management systems

Problems Solved

This technology helps in:

  • Improving transistor performance
  • Enhancing circuit efficiency
  • Reducing power consumption

Benefits

The benefits of this technology include:

  • Increased functionality
  • Higher speed operation
  • Lower energy consumption

Potential Commercial Applications

Potential commercial applications include:

  • Semiconductor industry
  • Electronics manufacturing
  • Telecommunications sector

Possible Prior Art

One possible prior art could be the use of complementary transistors in integrated circuits for improved performance and efficiency.

Unanswered Questions

How does this technology compare to existing complementary transistor designs?

This article does not provide a direct comparison to existing designs in terms of performance, efficiency, or cost.

What are the specific manufacturing processes involved in creating these complementary transistors?

The article does not delve into the detailed manufacturing processes used to produce the complementary transistors.


Original Abstract Submitted

A complementary transistor is constituted of a first transistor TRand a second transistor TR, active regions of the respective transistors are formed by layering first A layers and the first B layers respectively, surface regions provided in a base correspond to first A layers respectively, first B layers each have a conductivity type different from that of the first A layers and extension layers of the first B layer are provided on insulation regions respectively.