20240021615. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Organization Name
Inventor(s)
Yoonjeong Kim of Suwon-si (KR)
Yeongmin Jeon of Suwon-si (KR)
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240021615 titled 'SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Simplified Explanation
The abstract describes a semiconductor device with active regions, a field region, a first insulating structure, a gate structure, source/drain regions, and a common contact plug. The first insulating structure overlaps the gate structure in a vertical direction.
- The semiconductor device has active regions parallel to each other on a substrate.
- A field region defines the active regions.
- A first insulating structure extends in a horizontal direction on the field region.
- A gate structure intersects the active regions and the first insulating structure in a horizontal direction.
- Source/drain regions are disposed on at least one side of the gate structure.
- The source/drain regions include first and second source/drain regions on the first and second active regions.
- A common contact plug is connected to the first and second source/drain regions on a first side of the gate structure.
Potential applications of this technology:
- Integrated circuits
- Microprocessors
- Memory devices
- Power devices
Problems solved by this technology:
- Efficient integration of active regions and source/drain regions
- Improved performance and functionality of semiconductor devices
Benefits of this technology:
- Compact design
- Enhanced electrical performance
- Increased functionality and integration capabilities
Original Abstract Submitted
a semiconductor device having active regions including a first active region and a second active region parallel to each other and respectively extending on a substrate in a first horizontal direction, a field region defining the active regions, a first insulating structure extending in the first horizontal direction on the field region, a gate structure extending, in a second horizontal direction, to intersect the active regions and the first insulating structure, source/drain regions disposed on at least one side of the gate structure, the source/drain regions including first source/drain regions on the first active region and second source/drain regions on the second active region, and a common contact plug on a first side of the gate structure and connected to the first and second source/drain regions opposing each other. the first insulating structure includes a first portion overlapping the gate structure in a vertical direction.
