18526445. SEMICONDUCTOR DEVICES WITH BACKSIDE ROUTING AND METHOD OF FORMING SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

SEMICONDUCTOR DEVICES WITH BACKSIDE ROUTING AND METHOD OF FORMING SAME

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Shang-Wen Chang of Jhubei City (TW)

Yi-Hsun Chiu of Zhubei City (TW)

Cheng-Chi Chuang of New Taipei City (TW)

Ching-Wei Tsai of Hsinchu (TW)

Wei-Cheng Lin of Taichung City (TW)

Shih-Wei Peng of Hsinchu (TW)

Jiann-Tyng Tzeng of Hsinchu (TW)

SEMICONDUCTOR DEVICES WITH BACKSIDE ROUTING AND METHOD OF FORMING SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18526445 titled 'SEMICONDUCTOR DEVICES WITH BACKSIDE ROUTING AND METHOD OF FORMING SAME

Simplified Explanation

The method described in the patent application involves forming transistors on a substrate, creating front-side interconnect structures, etching the backside of the substrate, forming backside vias connected to the transistors, depositing a dielectric layer, and forming conductive lines for power and signal transmission.

• Forming transistors on a substrate
• Creating front-side interconnect structures
• Etching the backside of the substrate
• Forming backside vias connected to the transistors
• Depositing a dielectric layer
• Forming conductive lines for power and signal transmission

Potential Applications

The technology described in this patent application could be applied in the manufacturing of advanced electronic devices, such as integrated circuits, microprocessors, and memory chips.

Problems Solved

This technology solves the problem of efficiently connecting transistors on a substrate to power and signal lines, improving the overall performance and functionality of electronic devices.

Benefits

The benefits of this technology include enhanced electrical connectivity, increased efficiency in power distribution, and improved signal transmission within electronic devices.

Potential Commercial Applications

The technology described in this patent application has potential commercial applications in the semiconductor industry, specifically in the production of high-performance electronic components for various consumer electronics and industrial applications.

Possible Prior Art

One possible prior art for this technology could be the use of backside vias in semiconductor manufacturing processes to improve electrical connections between transistors and conductive lines.

Original Abstract Submitted

In an embodiment, a method of forming a structure includes forming a first transistor and a second transistor over a first substrate; forming a front-side interconnect structure over the first transistor and the second transistor; etching at least a backside of the first substrate to expose the first transistor and the second transistor; forming a first backside via electrically connected to the first transistor; forming a second backside via electrically connected to the second transistor; depositing a dielectric layer over the first backside via and the second backside via; forming a first conductive line in the dielectric layer, the first conductive line being a power rail electrically connected to the first transistor through the first backside via; and forming a second conductive line in the dielectric layer, the second conductive line being a signal line electrically connected to the second transistor through the second backside via.