18126298. METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES AND SEMICONDUCTOR DEVICES simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES AND SEMICONDUCTOR DEVICES
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Shu-Wen Shen of Hsinchu City (TW)
Yen-Po Lin of Taipei City (TW)
Chun-Han Chen of Changhua City (TW)
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES AND SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18126298 titled 'METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES AND SEMICONDUCTOR DEVICES
Simplified Explanation
The patent application describes a method of manufacturing a semiconductor device with a metal gate structure for a field effect transistor (FET).
- Formation of a first frontside contact between dummy metal gate structures over an isolation insulating layer.
- Creation of a frontside wiring layer over the first frontside contact.
- Removal of a part of the substrate from the backside to expose the bottom of the isolation insulating layer.
- Formation of a first opening in the isolation insulating layer to expose the bottom of the first frontside contact.
- Creation of a first backside contact by filling the first opening with a conductive material to connect the first frontside contact.
Potential Applications
- Semiconductor manufacturing industry
- Electronics industry
- Integrated circuit design
Problems Solved
- Improved connectivity in semiconductor devices
- Enhanced performance of field effect transistors
- Efficient manufacturing processes
Benefits
- Increased reliability of semiconductor devices
- Enhanced functionality of FETs
- Cost-effective manufacturing techniques
Original Abstract Submitted
In a method of manufacturing a semiconductor device, a field effect transistor (FET) having a metal gate structure, a source and a drain over a substrate is formed. A first frontside contact disposed between dummy metal gate structures is formed over an isolation insulating layer. A frontside wiring layer is formed over the first frontside contact. A part of the substrate is removed from a backside of the substrate so that a bottom of the isolation insulating layer is exposed. A first opening is formed in the isolation insulating layer from the bottom of the isolation insulating layer to expose a bottom of the first frontside contact. A first backside contact is formed by filling the first opening with a conductive material to connect the first frontside contact.
