18154275. SEMICONDUCTOR DEVICE WITH STRAINED CHANNELS AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
- 1 SEMICONDUCTOR DEVICE WITH STRAINED CHANNELS AND METHOD FOR MANUFACTURING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE WITH STRAINED CHANNELS AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICE WITH STRAINED CHANNELS AND METHOD FOR MANUFACTURING THE SAME
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Ding-Kang Shih of Hsinchu (TW)
SEMICONDUCTOR DEVICE WITH STRAINED CHANNELS AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18154275 titled 'SEMICONDUCTOR DEVICE WITH STRAINED CHANNELS AND METHOD FOR MANUFACTURING THE SAME
Simplified Explanation
The semiconductor device described in the abstract includes a channel structure with multiple channel features, source/drain features, and stressor elements to apply stress to the channel features. The stressor elements have a different atomic radius from the semiconductor elements, creating lattice defects that apply a second stress opposite to the first stress.
- Channel structure with multiple channel features
- Source/drain features at opposite sides of the channel structure
- Stressor elements with different atomic radius from semiconductor elements
- Lattice defects creating a second stress on the channel features
Potential Applications
The technology described in the patent application could be applied in the development of advanced semiconductor devices for various electronic applications, such as high-performance computing, telecommunications, and consumer electronics.
Problems Solved
This technology addresses the challenge of enhancing the performance and efficiency of semiconductor devices by introducing stressor elements to apply controlled stress to the channel features, improving overall device functionality.
Benefits
- Improved performance and efficiency of semiconductor devices - Enhanced reliability and durability - Potential for higher speed and lower power consumption
Potential Commercial Applications
The technology could be utilized in the production of next-generation processors, memory devices, and other semiconductor components for a wide range of electronic devices, offering improved performance and energy efficiency.
Possible Prior Art
One potential prior art in this field could be the use of stress engineering techniques in semiconductor devices to improve carrier mobility and device performance. Techniques such as strained silicon technology have been explored to enhance the electrical properties of semiconductor materials.
What are the specific stressor elements used in the semiconductor device described in the patent application?
The specific stressor elements used in the semiconductor device are those with an atomic radius different from that of the second semiconductor elements, creating lattice defects to apply stress to the channel features.
How does the introduction of stressor elements impact the overall performance of the semiconductor device?
The introduction of stressor elements helps to enhance the performance of the semiconductor device by applying controlled stress to the channel features, improving carrier mobility and overall device functionality.
Original Abstract Submitted
A semiconductor device includes a channel structure including a plurality of channel features which are spaced apart from each other, and which include first semiconductor elements, and two source/drain features disposed at two opposite sides of the channel structure such that each of the channel features interconnects the source/drain features. A major portion of each of the source/drain features includes second semiconductor elements, stressor elements which have an atomic radius different from that of the second semiconductor elements, and which are present in an amount sufficient to permit the source/drain features to apply a first stress to the channel features, and a certain degree of lattice defects present such that the source/drain features including the stressor elements apply a second stress to the channel features. The second stress is opposite to the first stress. A method for manufacturing the semiconductor device is also disclosed.
