18125512. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
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SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
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SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18125512 titled 'SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
Simplified Explanation
The disclosed patent application describes semiconductor devices and their fabrication methods. These devices consist of a substrate with an active pattern, a gate electrode that runs across the active pattern, source/drain patterns on opposite sides of the gate electrode, a channel pattern formed between the source/drain patterns, and a buried layer below the source/drain patterns and the channel pattern. The buried layer includes first segments below the source/drain patterns and a second segment below the channel pattern. The first segments have a lower level than the second segment.
- The patent application describes a semiconductor device with a unique structure that includes a buried layer with different levels below the source/drain patterns and the channel pattern.
- The buried layer is composed of first segments below the source/drain patterns and a second segment below the channel pattern, with the second segment having a higher level than the first segments.
- This structure allows for improved performance and functionality of the semiconductor device.
Potential applications of this technology:
- This technology can be applied in the fabrication of various semiconductor devices, such as transistors, integrated circuits, and microprocessors.
- It can be used in the production of high-performance electronic devices, including smartphones, computers, and other consumer electronics.
- The unique structure of the buried layer can enhance the efficiency and speed of data processing in these devices.
Problems solved by this technology:
- The buried layer with different levels addresses the issue of unwanted leakage currents in semiconductor devices.
- It helps in reducing power consumption and improving the overall performance of the devices.
- The structure also provides better control over the flow of electrical current, leading to enhanced functionality and reliability.
Benefits of this technology:
- The semiconductor devices fabricated using this technology can have improved performance, efficiency, and reliability.
- The unique structure of the buried layer allows for better control over electrical currents, resulting in reduced power consumption.
- This technology enables the production of advanced electronic devices with enhanced processing capabilities and improved battery life.
Original Abstract Submitted
Disclosed are semiconductor devices and their fabrication methods. The semiconductor device comprises a substrate provided with an active pattern, a gate electrode that runs across the active pattern and extends in a first direction, source/drain patterns on the active pattern on opposite sides of the gate electrode, a channel pattern formed of a portion of the active pattern between the source/drain patterns, and a buried layer below the source/drain patterns and the channel pattern. The buried layer includes first segments below the source/drain patterns and a second segment below the channel pattern. The first segments have a first level. The second segment has a second level. The first level is lower than the second level.
