18149495. FINFET EPI CHANNELS HAVING DIFFERENT HEIGHTS ON A STEPPED SUBSTRATE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

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FINFET EPI CHANNELS HAVING DIFFERENT HEIGHTS ON A STEPPED SUBSTRATE

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Cheng-Han Lee of New Taipei City (TW)

Chih-Yu Ma of Hsinchu (TW)

Shih-Chieh Chang of Taipei City (TW)

FINFET EPI CHANNELS HAVING DIFFERENT HEIGHTS ON A STEPPED SUBSTRATE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18149495 titled 'FINFET EPI CHANNELS HAVING DIFFERENT HEIGHTS ON A STEPPED SUBSTRATE

Simplified Explanation

The patent application describes a structure for a CMOS FinFET, which includes a stepped crystalline substrate with an upper step, a lower step, and a step rise.

  • The structure includes two fins made of different crystalline structures with different lattice constants.
  • The first fin is formed over the lower step and has a first lattice constant.
  • The second fin is formed over the upper step, separate from the first fin, and has a second lattice constant different from the first lattice constant.
  • A second crystalline structure is formed over the first crystalline structure, aligning with the tops of the fins.
  • The first and second fins are made of the same material but have different heights and different channel strain values.
  • The first fin is used as an NMOS fin, while the second fin is used as a PMOS fin of the CMOS FinFET.

Potential applications of this technology:

  • Integrated circuits
  • Semiconductor devices
  • CMOS FinFETs

Problems solved by this technology:

  • Allows for the creation of a CMOS FinFET structure with different lattice constants for the NMOS and PMOS fins.
  • Provides a stepped crystalline substrate to accommodate the different lattice constants.

Benefits of this technology:

  • Enables improved performance and efficiency of CMOS FinFETs.
  • Allows for better control of channel strain values in the NMOS and PMOS fins.
  • Provides flexibility in designing and optimizing CMOS FinFET structures.


Original Abstract Submitted

A structure includes a stepped crystalline substrate that includes an upper step, a lower step, and a step rise. A first fin includes a crystalline structure having a first lattice constant. The first fin is formed over the lower step. A second fin includes a crystalline structure having a second lattice constant, the second lattice constant being different than the first lattice constant. The second fin can be formed over the upper step apart from the first fin. A second crystalline structure can be formed over the first crystalline structure and the tops of the fins aligned. The first and second fins can be made of the same material, but with different heights and different channel strain values. The first fin can be used as an NMOS fin and the second fin can be used as a PMOS fin of a CMOS FinFET.

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