17685593. INTEGRATED CIRCUIT SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
INTEGRATED CIRCUIT SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Eunsil Park of Hwaseong-si (KR)
Wangseop Lim of Cheonan-si (KR)
INTEGRATED CIRCUIT SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17685593 titled 'INTEGRATED CIRCUIT SEMICONDUCTOR DEVICE
Simplified Explanation
The abstract describes an integrated circuit semiconductor device that includes two regions with active fins and transistors. Metal dams are used to separate the gate electrodes in one direction while maintaining electrical connection in another direction.
- The integrated circuit semiconductor device includes two regions with active fins and transistors.
- Metal dams are used to separate the gate electrodes in one direction.
- The metal dams, gate electrodes, and active fins are electrically connected in another direction.
Potential Applications
This technology can be applied in various electronic devices and systems, including:
- Mobile devices such as smartphones and tablets
- Computers and laptops
- Internet of Things (IoT) devices
- Automotive electronics
- Medical devices
Problems Solved
The technology addresses the following problems:
- Efficient separation of gate electrodes in a semiconductor device
- Maintaining electrical connection between different regions
- Enhancing the performance and reliability of integrated circuits
Benefits
The use of metal dams to separate gate electrodes in one direction while maintaining electrical connection in another direction offers several benefits:
- Improved circuit performance and reliability
- Enhanced integration of active fins and transistors
- Simplified manufacturing process
- Increased efficiency and functionality of electronic devices
Original Abstract Submitted
An integrated circuit semiconductor device includes a first region including first active fins extending in a first direction, and first transistors including first gate electrodes extending in a second direction, a second region in contact with the first region in the second direction, wherein the second region includes second active fins extending in the first direction, and second transistors including second gate electrodes extending in the second direction. The integrated circuit semiconductor device includes metal dams at a boundary of the first region and the second region to separate the first gate electrodes and the second gate electrodes in the second direction, wherein the metal dams, the first gate electrodes, and the second gate electrodes are electrically connected in the second direction.
