18521404. METHOD OF MAKING POLYSILICON STRUCTURE INCLUDING PROTECTIVE LAYER simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
- 1 METHOD OF MAKING POLYSILICON STRUCTURE INCLUDING PROTECTIVE LAYER
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 METHOD OF MAKING POLYSILICON STRUCTURE INCLUDING PROTECTIVE LAYER - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
METHOD OF MAKING POLYSILICON STRUCTURE INCLUDING PROTECTIVE LAYER
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
METHOD OF MAKING POLYSILICON STRUCTURE INCLUDING PROTECTIVE LAYER - A simplified explanation of the abstract
This abstract first appeared for US patent application 18521404 titled 'METHOD OF MAKING POLYSILICON STRUCTURE INCLUDING PROTECTIVE LAYER
Simplified Explanation
The abstract describes a method of making a semiconductor device involving the formation of a first polysilicon structure, a first spacer with a concave corner region, and a protective layer with varying thickness.
- Formation of a first polysilicon structure over a portion of the substrate.
- Formation of a first spacer with a concave corner region on the sidewall of the first polysilicon structure.
- Application of a protective layer covering the first spacer and the first polysilicon structure.
- The protective layer has different thicknesses over the concave corner region and the polysilicon structure.
- The difference in thickness between the concave corner region and the polysilicon structure is at most 10% of the thickness over the polysilicon structure.
Potential Applications
This technology can be applied in the manufacturing of advanced semiconductor devices, such as integrated circuits, microprocessors, and memory chips.
Problems Solved
This technology helps in improving the performance and reliability of semiconductor devices by providing enhanced protection and insulation to critical components.
Benefits
The method offers precise control over the protective layer thickness, ensuring optimal coverage and safeguarding of the semiconductor structures. It also enables the production of high-quality devices with improved functionality.
Potential Commercial Applications
The technology can be utilized by semiconductor companies for developing next-generation electronic devices with enhanced features and performance.
Possible Prior Art
One possible prior art could be the use of protective layers with uniform thickness in semiconductor device fabrication processes. However, the specific technique of varying thickness over different regions, as described in the patent application, may be a novel innovation.
Unanswered Questions
How does the concave corner region of the spacer contribute to the overall performance of the semiconductor device?
The abstract does not provide detailed information on the specific role or function of the concave corner region in the spacer structure.
What are the potential challenges or limitations of implementing this method in large-scale semiconductor manufacturing?
The abstract does not address the scalability or practicality of the proposed technique for mass production of semiconductor devices.
Original Abstract Submitted
A method of making a semiconductor device includes forming a first polysilicon structure over a first portion of a substrate. The method further includes forming a first spacer on a sidewall of the first polysilicon structure, wherein the first spacer has a concave corner region between an upper portion and a lower portion. The method further includes forming a protective layer covering an entirety of the first spacer and the first polysilicon structure, wherein the protective layer has a first thickness over the concave corner region and a second thickness over the first polysilicon structure, and a difference between the first thickness and the second thickness is at most 10% of the second thickness.
