18176170. SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME
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SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18176170 titled 'SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME
Simplified Explanation
The semiconductor device described in the patent application includes a substrate with an active pattern, a channel pattern consisting of multiple semiconductor patterns stacked vertically and spaced apart from each other on the active pattern, a source/drain pattern connected to the semiconductor patterns, and a gate electrode with a first inner electrode below a specific semiconductor pattern and a second inner electrode above that same semiconductor pattern. The specific semiconductor pattern has three portions: one adjacent to the first inner electrode, one adjacent to the second inner electrode, and one between the two portions. The third portion has a lower dopant concentration compared to the first and second portions, and the dopant used in the semiconductor pattern has a higher atomic weight than silicon.
- The semiconductor device includes a unique structure with vertically stacked semiconductor patterns and specific dopant concentrations.
- The gate electrode design with inner electrodes above and below the semiconductor pattern is a key innovation.
- The lower dopant concentration in the third portion of the semiconductor pattern provides distinct electrical properties.
- The use of a dopant with a higher atomic weight than silicon is another notable aspect of the invention.
Potential Applications
- This semiconductor device could be used in various electronic devices, such as smartphones, tablets, and computers.
- It may find applications in high-performance computing, where advanced semiconductor technologies are crucial.
- The unique structure and dopant concentration design could be beneficial for power electronics applications.
Problems Solved
- The semiconductor device addresses the need for improved performance and functionality in electronic devices.
- The specific dopant concentration design helps optimize the electrical characteristics of the device.
- The vertically stacked semiconductor patterns allow for increased integration and miniaturization of electronic components.
Benefits
- The semiconductor device offers enhanced performance and efficiency compared to conventional designs.
- The unique structure and dopant concentration design enable better control over the device's electrical properties.
- The increased integration and miniaturization potential of the vertically stacked patterns can lead to smaller and more compact electronic devices.
Original Abstract Submitted
A semiconductor device includes a substrate including an active pattern, a channel pattern including a plurality of semiconductor patterns spaced apart from each other and vertically stacked, on the active pattern, a source/drain pattern connected to the plurality of semiconductor patterns, and a gate electrode including a first inner electrode provided below a first semiconductor pattern among the plurality of semiconductor patterns, on the plurality of semiconductor patterns, and a second inner electrode provided above the first semiconductor pattern, the first semiconductor pattern includes a first portion adjacent to the first inner electrode, a second portion adjacent to the second inner electrode, and a third portion between the first and second portions, the first semiconductor pattern includes a dopant having an atomic weight greater than that of silicon, and a dopant concentration of the third portion is smaller than a dopant concentration of each of the first and second portions.
