18447840. Integrated Circuit Layout, Integrated Circuit, and Method for Fabricating the Same simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Integrated Circuit Layout, Integrated Circuit, and Method for Fabricating the Same
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Shih-Lien Linus Lu of Hsinchu (TW)
Integrated Circuit Layout, Integrated Circuit, and Method for Fabricating the Same - A simplified explanation of the abstract
This abstract first appeared for US patent application 18447840 titled 'Integrated Circuit Layout, Integrated Circuit, and Method for Fabricating the Same
Simplified Explanation
The abstract describes an integrated circuit layout that includes a first active region with field effect transistors (FETs) and interconnects contacting sources and drains of the FETs through a set of contact structures, at least one of which is electrically non-conductive.
- Integrated circuit layout with field effect transistors (FETs)
- Interconnects connecting sources and drains of FETs through contact structures
- At least one contact structure is electrically non-conductive
Potential Applications
- Semiconductor industry
- Electronics manufacturing
- Integrated circuit design
Problems Solved
- Efficient interconnection of FETs in integrated circuits
- Improved performance and reliability of integrated circuits
Benefits
- Enhanced functionality of integrated circuits
- Increased efficiency in circuit design
- Improved overall performance and reliability of electronic devices
Original Abstract Submitted
An integrated circuit layout is provided. The integrated circuit layout includes: a first active region having a first plurality of field effect transistors (FETs); and an interconnect contacting sources and drains of the first plurality of FETs in the first active region through a first set of contact structures. At least one of the first set of contact structures is electrically non-conductive.
