18519862. CONTACT STRUCTURE OF A SEMICONDUCTOR DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
- 1 CONTACT STRUCTURE OF A SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 CONTACT STRUCTURE OF A SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
CONTACT STRUCTURE OF A SEMICONDUCTOR DEVICE
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Joanna Chaw Yane Yin of Hsinchu (TW)
Hua Feng Chen of Hsinchu City (TW)
CONTACT STRUCTURE OF A SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18519862 titled 'CONTACT STRUCTURE OF A SEMICONDUCTOR DEVICE
Simplified Explanation
The patent application describes devices and methods for configuring a profile of a liner layer before filling an opening over a semiconductor substrate. The liner layer has varying thicknesses at the bottom and top of the opening, with the top thickness being smaller than the bottom thickness. The filled opening ultimately creates a contact structure.
- The innovation involves configuring a liner layer with varying thicknesses at different parts of an opening over a semiconductor substrate.
- The technology aims to optimize the contact structure formed by the filled opening.
Potential Applications
The technology could be applied in semiconductor manufacturing processes to improve the performance and reliability of contact structures in electronic devices.
Problems Solved
1. Inconsistent contact structures due to uniform liner layer thickness. 2. Limited control over the profile of the liner layer in semiconductor devices.
Benefits
1. Enhanced performance and reliability of contact structures. 2. Improved control over the configuration of the liner layer in semiconductor devices.
Potential Commercial Applications
Optimizing contact structures in semiconductor devices for improved functionality and durability.
Possible Prior Art
There may be prior art related to methods of configuring liner layers in semiconductor devices, but specific examples are not provided in the patent application.
Unanswered Questions
How does this technology compare to existing methods of configuring liner layers in semiconductor devices?
The patent application does not provide a direct comparison to existing methods, leaving it unclear how this innovation differs or improves upon current practices.
What specific semiconductor manufacturing processes can benefit most from this technology?
The application does not specify which processes within semiconductor manufacturing would see the most significant improvements from this innovation.
Original Abstract Submitted
Devices and methods that include for configuring a profile of a liner layer before filling an opening disposed over a semiconductor substrate. The liner layer has a first thickness at the bottom of the opening and a second thickness a top of the opening, the second thickness being smaller that the first thickness. In an embodiment, the filled opening provides a contact structure.
