18153553. BARRIER LAYER FOR WEAKENED BOUNDARY EFFECT simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
Contents
- 1 BARRIER LAYER FOR WEAKENED BOUNDARY EFFECT
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 BARRIER LAYER FOR WEAKENED BOUNDARY EFFECT - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
BARRIER LAYER FOR WEAKENED BOUNDARY EFFECT
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Yu-Xuan Wang of New Taipei (TW)
Cheng-Chun Tseng of Hsinchu (TW)
Yu-Hsien Lin of Kaohsiung (TW)
Ryan Chia-Jen Chen of Hsinchu (TW)
BARRIER LAYER FOR WEAKENED BOUNDARY EFFECT - A simplified explanation of the abstract
This abstract first appeared for US patent application 18153553 titled 'BARRIER LAYER FOR WEAKENED BOUNDARY EFFECT
Simplified Explanation
The fabrication method described in the abstract involves forming metal layers over semiconductor structures, patterning photolithographic layers to expose portions of the metal layers, and creating a barrier structure between the semiconductor structures using the remaining metal layers.
- Forming a first metal layer over first and second semiconductor structures
- Patterning a photolithographic layer to expose a portion of the first metal layer over the first semiconductor structure
- Removing the exposed portion of the first metal layer
- Forming a second metal layer over the semiconductor structures
- Patterning a second photolithographic layer to expose a portion of the second metal layer over the second semiconductor structure
- Removing the exposed portion of the first and second metal layers
- Generating a barrier structure between the semiconductor structures using the remaining metal layers
Potential Applications
This technology could be applied in the manufacturing of semiconductor devices, integrated circuits, and other electronic components where precise metal patterning and barrier structures are required.
Problems Solved
This method solves the problem of creating barrier structures between semiconductor structures without exposing the boundaries between them, which can improve the performance and reliability of electronic devices.
Benefits
The benefits of this technology include improved device performance, enhanced reliability, and increased manufacturing efficiency in the production of semiconductor devices.
Potential Commercial Applications
The potential commercial applications of this technology include semiconductor manufacturing companies, electronics manufacturers, and research institutions working on advanced electronic devices.
Possible Prior Art
One possible prior art for this technology could be the use of similar photolithographic processes in semiconductor fabrication, but with different methods for creating barrier structures between semiconductor components.
Unanswered Questions
How does this method compare to existing techniques for creating barrier structures in semiconductor devices?
This article does not provide a direct comparison to existing techniques, so it is unclear how this method differs or improves upon current practices in the industry.
What are the specific performance benefits of using this fabrication method in electronic devices?
The article mentions improved device performance as a benefit, but it does not specify the exact performance enhancements that can be achieved through the use of this technology.
Original Abstract Submitted
A fabrication method is disclosed that includes: forming a first metal layer over first and second semiconductor structures; forming a first patterned photolithographic layer with an opening that exposes a portion of the first metal layer over the first semiconductor structure but not to a boundary between semiconductor structures; removing the exposed portion of the first metal layer; forming a second metal layer over the first and second semiconductor structures; forming a second patterned photolithographic layer with an opening that exposes a portion of the second metal layer over the second semiconductor structure but not to the boundary; removing the exposed portion of the first and second metal layers; wherein a barrier structure is generated between the first and second semiconductor structures that includes remaining portions of the first metal layer and a portion of the second metal layer overlying the remaining portions of the first metal layer.
