18521253. SEMICONDUCTOR DEVICE HAVING A PLURALITY OF CHANNEL LAYERS AND METHOD OF MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
Contents
- 1 SEMICONDUCTOR DEVICE HAVING A PLURALITY OF CHANNEL LAYERS AND METHOD OF MANUFACTURING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE HAVING A PLURALITY OF CHANNEL LAYERS AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICE HAVING A PLURALITY OF CHANNEL LAYERS AND METHOD OF MANUFACTURING THE SAME
Organization Name
Inventor(s)
Woo Cheol Shin of Suwon-si (KR)
Sang Hoon Lee of Suwon-si (KR)
Sung Man Whang of Suwon-si (KR)
SEMICONDUCTOR DEVICE HAVING A PLURALITY OF CHANNEL LAYERS AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18521253 titled 'SEMICONDUCTOR DEVICE HAVING A PLURALITY OF CHANNEL LAYERS AND METHOD OF MANUFACTURING THE SAME
Simplified Explanation
The semiconductor device described in the abstract includes a unique structure with multiple channel layers of different crystallographic orientations and thicknesses. This design aims to improve the performance and efficiency of the device.
- The device has a first semiconductor layer with first and second regions.
- There are multiple first channel layers on the first region, each with a first crystallographic orientation.
- A first gate electrode surrounds the first channel layers.
- Multiple second channel layers are on the second region, each with a second crystallographic orientation different from the first.
- A second gate electrode surrounds the second channel layers.
Potential Applications
This technology could be applied in advanced electronic devices such as high-performance transistors, sensors, and integrated circuits.
Problems Solved
This innovation addresses the challenge of enhancing semiconductor device performance by optimizing the crystallographic orientations and thicknesses of the channel layers.
Benefits
The device's unique structure can lead to improved efficiency, speed, and reliability in electronic applications.
Potential Commercial Applications
The technology could be valuable in the development of next-generation electronics for industries such as telecommunications, computing, and consumer electronics.
Possible Prior Art
One possible prior art could be the use of different crystallographic orientations in semiconductor devices to enhance performance. However, the specific combination of multiple channel layers with varying orientations and thicknesses may be a novel aspect of this innovation.
Unanswered Questions
How does this technology compare to existing semiconductor devices in terms of performance and efficiency?
This article provides a detailed description of the semiconductor device's structure and design but does not directly compare its performance and efficiency to existing technologies. Further research or testing would be needed to determine how this innovation stacks up against current semiconductor devices.
What are the potential challenges or limitations of implementing this technology on a larger scale?
While the abstract highlights the benefits of the unique structure of the semiconductor device, it does not address any potential challenges or limitations that may arise when scaling up production or integrating this technology into practical applications. Further investigation would be necessary to understand the full scope of implementing this innovation.
Original Abstract Submitted
A semiconductor device includes a first semiconductor layer having first and second regions, a plurality of first channel layers spaced apart from each other in a vertical direction on the first region of the first semiconductor layer, a first gate electrode surrounding the plurality of first channel layers, a plurality of second channel layers spaced apart from one another in the vertical direction on the second region of the first semiconductor layer, and a second gate electrode surrounding the plurality of second channel layers, wherein each of the plurality of first channel layers has a first crystallographic orientation, and each of the plurality of second channel layers has a second crystallographic orientation different from the first crystallographic orientation, and wherein a thickness of each of the plurality of first channel layers is different from a thickness of each of the plurality of second channel layers.
