18521140. Footing Removal in Cut-Metal Process simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
- 1 Footing Removal in Cut-Metal Process
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 Footing Removal in Cut-Metal Process - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
Footing Removal in Cut-Metal Process
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Ming-Chi Huang of Zhubei City (TW)
Kuo-Bin Huang of Jhubei City (TW)
Ying-Liang Chuang of Zhubei City (TW)
Footing Removal in Cut-Metal Process - A simplified explanation of the abstract
This abstract first appeared for US patent application 18521140 titled 'Footing Removal in Cut-Metal Process
Simplified Explanation
The method described in the abstract involves forming a gate stack over two semiconductor fins, performing an anisotropic etching to create an opening between the fins, removing a metal gate portion, and filling the opening with a dielectric material.
- Gate stack formed over two semiconductor fins
- Anisotropic etching to create opening between fins
- Removal of metal gate portion
- Filling opening with dielectric material
Potential Applications
This technology could be applied in the semiconductor industry for advanced transistor fabrication processes.
Problems Solved
This technology helps in improving the performance and efficiency of transistors by optimizing the gate structure.
Benefits
The method allows for precise control over the gate structure, leading to enhanced transistor performance and reduced power consumption.
Potential Commercial Applications
This technology could be utilized in the production of high-performance integrated circuits for various electronic devices.
Possible Prior Art
One possible prior art could be the use of similar etching techniques in semiconductor manufacturing processes to create precise structures.
Unanswered Questions
How does this method compare to existing techniques in terms of transistor performance?
The article does not provide a direct comparison with existing techniques in terms of transistor performance.
What are the potential challenges in scaling up this method for mass production?
The article does not address the potential challenges in scaling up this method for mass production.
Original Abstract Submitted
A method includes forming a gate stack, which includes a first portion over a portion of a first semiconductor fin, a second portion over a portion of a second semiconductor fin, and a third portion connecting the first portion to the second portion. An anisotropic etching is performed on the third portion of the gate stack to form an opening between the first portion and the second portion. A footing portion of the third portion remains after the anisotropic etching. The method further includes performing an isotropic etching to remove a metal gate portion of the footing portion, and filling the opening with a dielectric material.
