18518459. SEMICONDUCTOR DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Chun-Heng Chen of Hsinchu City (TW)
Ming-Ho Lin of Taipei City (TW)
Chi-On Chui of Hsinchu City (TW)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18518459 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the abstract includes a fin, a first dielectric layer, and a second dielectric layer. The first dielectric layer is on the fin, with the second dielectric layer between the fin and the first dielectric layer. The first dielectric layer is thinner on the fin's sidewall compared to the second dielectric layer.
- The semiconductor device features at least one fin structure.
- There are two dielectric layers - a first dielectric layer and a second dielectric layer.
- The first dielectric layer is directly on the fin, while the second dielectric layer is between the fin and the first dielectric layer.
- The first dielectric layer is thinner on the sidewall of the fin than the second dielectric layer.
Potential Applications
- Advanced semiconductor manufacturing processes
- High-performance electronic devices
- Improved thermal management in electronic components
Problems Solved
- Enhanced electrical performance due to optimized dielectric layer thickness
- Better control over heat dissipation in semiconductor devices
- Increased efficiency in semiconductor fabrication processes
Benefits
- Higher performance and reliability of semiconductor devices
- Improved thermal characteristics leading to better overall device operation
- Potential for smaller and more energy-efficient electronic products
Original Abstract Submitted
A semiconductor device includes at least one fin, a first dielectric layer and a second dielectric layer. The first dielectric layer is disposed on the at least one fin. The second dielectric layer between the at least one fin and the first dielectric layer. A thickness of the first dielectric layer on a sidewall of the at least one fin is less than a thickness of the second dielectric layer on the sidewall of the at least one fin.
