17683589. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
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SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
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SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 17683589 titled 'SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
Simplified Explanation
The patent application describes a semiconductor device that includes a substrate with two active patterns and gate electrodes on each pattern. There is a gate cutting pattern between the gate electrodes, gate spacers on the side surfaces of the gate electrode, and a gate capping pattern on top surfaces of the gate electrode, gate cutting pattern, and gate spacers.
- The semiconductor device has a substrate with two active patterns and gate electrodes on each pattern.
- A gate cutting pattern is placed between the gate electrodes.
- Gate spacers are positioned on the side surfaces of the gate electrode.
- A gate capping pattern is present on the top surfaces of the gate electrode, gate cutting pattern, and gate spacers.
- The gate cutting pattern has two opposite side surfaces that are in contact with the gate spacers.
- The top surface of the gate cutting pattern is closer to the substrate than the top surfaces of the gate spacers.
Potential applications of this technology:
- Semiconductor manufacturing industry
- Integrated circuit design and fabrication
- Electronics and telecommunications industry
Problems solved by this technology:
- Improved performance and efficiency of semiconductor devices
- Enhanced control over gate electrode structures
- Reduction of signal interference and leakage
Benefits of this technology:
- Higher functionality and reliability of semiconductor devices
- Increased speed and performance of electronic devices
- Improved power efficiency and reduced energy consumption
Original Abstract Submitted
A semiconductor device includes a substrate including a first active pattern and a second active pattern, a gate electrode including a first gate electrode on the first active pattern and a second gate electrode on the second active pattern, a gate cutting pattern between the first and second gate electrodes, gate spacers on opposing side surfaces of the gate electrode, and a gate capping pattern on top surfaces of the gate electrode, the gate cutting pattern, and the gate spacers and extending in the first direction. The gate cutting pattern includes a first and second side surfaces, which are opposite to each other in a second direction crossing the first direction. The first and side surfaces are in contact with respective ones of the gate spacers, and the top surface of the gate cutting pattern is closer to the substrate than the top surfaces of the pair of gate spacers.
