18181750. MULTI-GATE DEVICE FABRICATION METHODS AND RELATED STRUCTURES simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
- 1 MULTI-GATE DEVICE FABRICATION METHODS AND RELATED STRUCTURES
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 MULTI-GATE DEVICE FABRICATION METHODS AND RELATED STRUCTURES - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
MULTI-GATE DEVICE FABRICATION METHODS AND RELATED STRUCTURES
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Cheng-Wei Chang of Hsinchu (TW)
Chi-Yu Chou of Hsinchu County (TW)
Lun-Kuang Tan of Hsinchu City (TW)
Shuen-Shin Liang of Hsinchu County (TW)
MULTI-GATE DEVICE FABRICATION METHODS AND RELATED STRUCTURES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18181750 titled 'MULTI-GATE DEVICE FABRICATION METHODS AND RELATED STRUCTURES
Simplified Explanation
The abstract describes a method for modulating the threshold voltage of a device by providing a fin with semiconductor channel layers for a P-type transistor, forming a gate dielectric layer, and a P-type metal film, followed by annealing and removing the metal film.
- The method involves providing a fin with semiconductor channel layers for a P-type transistor.
- Forming a gate dielectric layer surrounding the semiconductor channel layers.
- Adding a P-type metal film around the gate dielectric layer.
- Annealing the semiconductor device.
- Removing the P-type metal film after annealing.
Potential Applications
This technology could be applied in the semiconductor industry for improving the performance and efficiency of electronic devices.
Problems Solved
This method helps in modulating the threshold voltage of a device, which is crucial for controlling the operation and power consumption of electronic devices.
Benefits
The method offers a way to adjust the threshold voltage of a device, leading to enhanced performance and energy efficiency.
Potential Commercial Applications
- Semiconductor manufacturing
- Electronics industry
Possible Prior Art
There may be prior art related to methods for modulating threshold voltage in semiconductor devices using different materials or techniques. Further research is needed to identify specific prior art in this area.
What are the specific materials used in the P-type metal film?
The abstract mentions the formation of a P-type metal film, but it does not specify the exact materials used in this film.
How does the annealing process affect the device's performance?
The abstract mentions annealing the semiconductor device, but it does not elaborate on how this process impacts the device's performance or characteristics.
Original Abstract Submitted
A method for modulating a threshold voltage of a device. The method includes providing a fin extending from a substrate, where the fin includes a plurality of semiconductor channel layers defining a channel region for a P-type transistor. In some embodiments, the method further includes forming a first gate dielectric layer surrounding at least three sides of each of the plurality of semiconductor channel layers of the P-type transistor. Thereafter, the method further includes forming a P-type metal film surrounding the first gate dielectric layer. In an example, and after forming the P-type metal film, the method further includes annealing the semiconductor device. After the annealing, and in some embodiments, the method includes removing the P-type metal film.
