18526839. Multi-Gate Device And Related Methods simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)

Multi-Gate Device And Related Methods

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Kuan-Ting Pan of Taipei City (TW)

Zhi-Chang Lin of Hsinchu County (TW)

Yi-Ruei Jhan of Keelung City (TW)

Chi-Hao Wang of Hsinchu County (TW)

Huan-Chieh Su of Changhua County (TW)

Shi Ning Ju of Hsinchu City (TW)

Kuo-Cheng Chiang of Hsinchu County (TW)

Multi-Gate Device And Related Methods - A simplified explanation of the abstract

This abstract first appeared for US patent application 18526839 titled 'Multi-Gate Device And Related Methods

Simplified Explanation

The abstract describes a method of fabricating a device by forming a dummy gate over a plurality of fins, removing portions of the dummy gate to create trenches, filling the trenches with dielectric material and metal layer, and etching back the metal layer to achieve specific dimensions.

• Formation of dummy gate over fins
• Removal of portions of dummy gate to create trenches
• Filling trenches with dielectric material and metal layer
• Etching back the metal layer to achieve specific dimensions

Potential Applications

The technology described in this patent application could be applied in the manufacturing of advanced semiconductor devices, such as transistors and integrated circuits.

Problems Solved

This technology solves the problem of achieving precise dimensions and structures in the fabrication of semiconductor devices, which is crucial for their performance and efficiency.

Benefits

The benefits of this technology include improved control over device fabrication, leading to enhanced performance, efficiency, and reliability of semiconductor devices.

Potential Commercial Applications

The potential commercial applications of this technology include the production of high-performance electronic devices for various industries, such as telecommunications, computing, and consumer electronics.

Possible Prior Art

One possible prior art for this technology could be the use of similar fabrication techniques in the semiconductor industry to create advanced devices with precise dimensions and structures.

How does this technology compare to existing methods in terms of cost-effectiveness?

The article does not provide information on the cost-effectiveness of this technology compared to existing methods.

What are the environmental implications of using this technology in device fabrication?

The article does not address the environmental implications of using this technology in device fabrication.

Original Abstract Submitted

A method of fabricating a device includes forming a dummy gate over a plurality of fins. Thereafter, a first portion of the dummy gate is removed to form a first trench that exposes a first hybrid fin and a first part of a second hybrid fin. The method further includes filling the first trench with a dielectric material disposed over the first hybrid fin and over the first part of the second hybrid fin. Thereafter, a second portion of the dummy gate is removed to form a second trench and the second trench is filled with a metal layer. The method further includes etching-back the metal layer, where a first plane defined by a first top surface of the metal layer is disposed beneath a second plane defined by a second top surface of a second part of the second hybrid fin after the etching-back the metal layer.