17945422. MULTI-VT SOLUTION FOR REPLACEMENT METAL GATE BONDED STACKED FET simplified abstract (International Business Machines Corporation)
Contents
- 1 MULTI-VT SOLUTION FOR REPLACEMENT METAL GATE BONDED STACKED FET
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 MULTI-VT SOLUTION FOR REPLACEMENT METAL GATE BONDED STACKED FET - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
MULTI-VT SOLUTION FOR REPLACEMENT METAL GATE BONDED STACKED FET
Organization Name
International Business Machines Corporation
Inventor(s)
Ruqiang Bao of Niskayuna NY (US)
Dechao Guo of Niskayuna NY (US)
Junli Wang of Slingerlands NY (US)
Heng Wu of Santa Clara CA (US)
MULTI-VT SOLUTION FOR REPLACEMENT METAL GATE BONDED STACKED FET - A simplified explanation of the abstract
This abstract first appeared for US patent application 17945422 titled 'MULTI-VT SOLUTION FOR REPLACEMENT METAL GATE BONDED STACKED FET
Simplified Explanation
The semiconductor device described in the abstract includes a substrate, a set of first transistors with first gates and first dielectrics, an insulating layer, and a set of second transistors with second gates and second dielectrics. The first dielectrics are connected to the sidewalls of the first gates, while the second dielectrics are connected to the insulating layer.
- Substrate with first and second transistors
- Insulating layer separating first and second transistors
- Dielectrics connected to gates and insulating layer
Potential Applications
This technology could be applied in:
- Integrated circuits
- Microprocessors
- Memory devices
Problems Solved
This technology helps to:
- Improve performance of semiconductor devices
- Increase efficiency of electronic components
Benefits
The benefits of this technology include:
- Enhanced functionality of transistors
- Reduction in power consumption
- Higher processing speeds
Potential Commercial Applications
This technology could be used in:
- Consumer electronics
- Telecommunications
- Automotive industry
Possible Prior Art
One possible prior art for this technology could be:
- Traditional semiconductor devices with single-layer transistors
Unanswered Questions
How does this technology impact the overall cost of semiconductor devices?
The abstract does not provide information on the cost implications of implementing this technology.
Are there any limitations to the size or scale at which this technology can be effectively utilized?
The abstract does not address any potential limitations in the size or scale of application for this technology.
Original Abstract Submitted
A semiconductor device includes a substrate; a set of first transistors positioned on an upper surface of the substrate, each of the set of first transistors comprising a first gate and a first dielectric; an insulating layer positioned on an upper surface of the set of first transistors; and a set of second transistors positioned over the set of first transistors and with the set of first transistors on an upper surface of the insulating layer, each of the set of second transistors having a second gate and a second dielectric; wherein each of the first dielectrics is connected to a sidewall of each of a corresponding first gate; and wherein each of the second dielectrics is connected to the insulating layer.
