18173847. INTEGRATED CIRCUIT DEVICES INCLUDING STACKED TRANSISTORS AND METHODS OF FORMING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
Contents
- 1 INTEGRATED CIRCUIT DEVICES INCLUDING STACKED TRANSISTORS AND METHODS OF FORMING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 INTEGRATED CIRCUIT DEVICES INCLUDING STACKED TRANSISTORS AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
INTEGRATED CIRCUIT DEVICES INCLUDING STACKED TRANSISTORS AND METHODS OF FORMING THE SAME
Organization Name
Inventor(s)
Seung Min Song of Halfmoon NY (US)
Seungchan Yun of Waterford NY (US)
Kang-ill Seo of Springfield VA (US)
INTEGRATED CIRCUIT DEVICES INCLUDING STACKED TRANSISTORS AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18173847 titled 'INTEGRATED CIRCUIT DEVICES INCLUDING STACKED TRANSISTORS AND METHODS OF FORMING THE SAME
Simplified Explanation
Integrated circuit devices described in the patent application include a structure with upper and lower channel regions, intergate insulators, and gate electrodes. The upper gate electrode is positioned above the upper channel region and upper portion of the intergate insulator, while the lower gate electrode is located below the lower channel region and lower portion of the intergate insulator.
- Upper and lower channel regions on a substrate
- Intergate insulator with upper and lower portions separating the channel regions
- Upper gate electrode positioned above the upper channel region and upper portion of the intergate insulator
- Lower gate electrode located below the lower channel region and lower portion of the intergate insulator
Potential Applications
This technology can be applied in the development of advanced integrated circuits for various electronic devices such as smartphones, computers, and IoT devices.
Problems Solved
This innovation helps in improving the performance and efficiency of integrated circuit devices by optimizing the structure of the channel regions and gate electrodes.
Benefits
- Enhanced functionality and speed of electronic devices - Increased reliability and durability of integrated circuits - Potential for miniaturization and energy efficiency in electronic devices
Potential Commercial Applications
"Advanced Integrated Circuit Devices for Enhanced Electronic Performance"
Possible Prior Art
There may be prior art related to the optimization of channel regions and gate electrodes in integrated circuit devices, but specific examples are not provided in this patent application.
Unanswered Questions
How does this technology impact the overall power consumption of electronic devices?
The patent application does not provide specific details on the power consumption aspect of the integrated circuit devices. Further research or testing may be needed to determine the impact on power efficiency.
What are the potential challenges in implementing this technology on a large scale for mass production?
The patent application does not address the challenges that may arise during the mass production of integrated circuit devices using this technology. Factors such as cost, scalability, and manufacturing processes could be potential areas of concern that need to be explored further.
Original Abstract Submitted
Integrated circuit devices may include a first upper channel region on a substrate, a first lower channel region between the substrate and the first upper channel region, a first intergate insulator that is between the first lower channel region and the first upper channel region and includes a lower portion and an upper portion, an upper gate electrode, and a lower gate electrode between the substrate and the upper gate electrode. The first upper channel region and the upper portion of the first intergate insulator may be in the upper gate electrode. The first lower channel region and the lower portion of the first intergate insulator are in the lower gate electrode.
