International business machines corporation (20240096947). COMPOSITE NANOSHEET TUNNEL TRANSISTORS simplified abstract
Contents
- 1 COMPOSITE NANOSHEET TUNNEL TRANSISTORS
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 COMPOSITE NANOSHEET TUNNEL TRANSISTORS - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
COMPOSITE NANOSHEET TUNNEL TRANSISTORS
Organization Name
international business machines corporation
Inventor(s)
Kirsten Emilie Moselund of Rüschlikon (CH)
Nicolas Jean Loubet of GUILDERLAND NY (US)
Bogdan Cezar Zota of Rüschlikon (CH)
Shogo Mochizuki of Mechanicville NY (US)
COMPOSITE NANOSHEET TUNNEL TRANSISTORS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240096947 titled 'COMPOSITE NANOSHEET TUNNEL TRANSISTORS
Simplified Explanation
The present invention relates to the implantation of composite tunnel field effect transistors (TFETs) in a nanosheet process.
- Formation of first source/drain region with first composition and doping type.
- Formation of second source/drain region with second composition and doping type opposite to the first.
- Formation of a first composite channel structure between the first and second source/drain regions.
- The first composite channel structure includes a first nanosheet trimmed to expose extension portions of the first and second source/drain regions.
- The first composite channel structure further includes a first channel epitaxy wrapping around the trimmed first nanosheet.
- The first channel epitaxy is connected laterally to the extension portions.
Potential Applications
The technology can be applied in:
- Semiconductor industry for advanced transistor design.
- Electronics industry for high-performance devices.
Problems Solved
This technology helps in:
- Improving transistor performance.
- Enhancing device efficiency.
Benefits
The benefits of this technology include:
- Increased speed and efficiency of electronic devices.
- Enhanced overall performance of transistors.
Potential Commercial Applications
The technology can be commercially be used in:
- Manufacturing of high-speed processors.
- Development of energy-efficient electronics.
Possible Prior Art
One possible prior art could be the use of traditional tunnel field effect transistors in semiconductor devices.
Unanswered Questions
How does this technology compare to existing transistor designs in terms of performance and efficiency?
This technology offers improved performance and efficiency compared to traditional transistor designs due to the composite structure and nanosheet process.
What are the potential challenges in scaling up the production of composite TFETs using a nanosheet process?
Scaling up production may face challenges related to manufacturing costs, process complexity, and integration with existing semiconductor technologies.
Original Abstract Submitted
embodiments of the present invention are directed to the implantation of composite tunnel field effect transistors (tfets) in a nanosheet process. in a non-limiting embodiment of the invention, a first source or drain region is formed having a first composition and a first doping type. a second source or drain region is formed having a second composition and a second doping type opposite the first doping type. a first composite channel structure is formed between the first source or drain region and the second source or drain region. the first composite channel structure includes a first nanosheet trimmed to expose extension portions of the first source or drain region and extension portions of the second source or drain region. the first composite channel structure further includes a first channel epitaxy wrapping around the trimmed first nanosheet. the first channel epitaxy is connected laterally to the extension portions.
