18522727. Integrated Standard Cell Structure simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
Contents
- 1 Integrated Standard Cell Structure
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 Integrated Standard Cell Structure - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
Integrated Standard Cell Structure
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Jhon Jhy Liaw of Hsinchu County (TW)
Integrated Standard Cell Structure - A simplified explanation of the abstract
This abstract first appeared for US patent application 18522727 titled 'Integrated Standard Cell Structure
Simplified Explanation
The abstract describes an integrated circuit with two standard cells, each containing pFETs and nFETs with dielectric gates. A filler cell is placed between the standard cells, spanning the dielectric gates. The pFETs and nFETs are formed on continuous active regions.
- The integrated circuit includes two standard cells with pFETs and nFETs.
- A filler cell is placed between the standard cells, spanning the dielectric gates.
- The pFETs and nFETs are formed on continuous active regions.
Potential Applications
The technology described in this patent application could be applied in the semiconductor industry for the development of more efficient and compact integrated circuits.
Problems Solved
This technology solves the problem of optimizing space and improving the performance of integrated circuits by efficiently integrating standard cells with filler cells.
Benefits
The benefits of this technology include increased efficiency, improved performance, and reduced space requirements in integrated circuits.
Potential Commercial Applications
- "Optimizing Space and Performance in Integrated Circuits with Filler Cells"
Possible Prior Art
There may be prior art related to the integration of standard cells with filler cells in the semiconductor industry, but specific examples are not provided in this abstract.
Unanswered Questions
How does the placement of the filler cell impact the overall performance of the integrated circuit?
The abstract does not provide details on how the filler cell placement affects the performance of the integrated circuit.
What specific advantages does the integration of standard cells with filler cells offer compared to traditional integrated circuit designs?
The abstract does not elaborate on the specific advantages of integrating standard cells with filler cells in this patent application.
Original Abstract Submitted
An integrated circuit includes a first standard cell having a first pFET and a first nFET integrated, and having a first dielectric gate on a first standard cell boundary. The integrated circuit further includes a second standard cell being adjacent to the first standard cell, having a second pFET and a second nFET integrated, and having a second dielectric gate on a second standard cell boundary. The integrated circuit also includes a first filler cell configured between the first and second standard cells, and spanning from the first dielectric gate to the second dielectric gate. The first pFET and the second pFET are formed on a first continuous active region. The first nFET and the second nFET are formed on a second continuous active region.
