17804397. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

Organization Name

Samsung Electronics Co., Ltd.

Inventor(s)

KYUNGSOO Kim of Hwaseong-si (KR)

JINYOUNG Park of Anyang-si (KR)

KYEN-HEE Lee of Seoul (KR)

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 17804397 titled 'SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

Simplified Explanation

The patent application describes a semiconductor device that includes various patterns and interconnection lines on a substrate. It specifically focuses on the structure and arrangement of the gate electrode and active contact.

• The semiconductor device includes an active pattern, source/drain pattern, gate electrode, active contact, and interconnection lines.
• The gate electrode has an electrode body portion and a protruding portion that contacts the second lower interconnection line.
• The active contact has a contact body portion and a protruding portion that contacts the first lower interconnection line.
• The device also includes spacers between the gate electrode and active contact, with the first spacer being higher than the second spacer.

Potential applications of this technology:

• Semiconductor manufacturing industry
• Electronics industry
• Integrated circuit design and production

Problems solved by this technology:

• Provides a specific structure and arrangement for the gate electrode and active contact in a semiconductor device.
• Ensures proper contact and connection between the various patterns and interconnection lines.
• Helps improve the performance and reliability of the semiconductor device.

Benefits of this technology:

• Enhanced functionality and efficiency of the semiconductor device.
• Improved electrical conductivity and signal transmission.
• Increased reliability and durability of the device.

Original Abstract Submitted

A semiconductor device includes an active pattern on a substrate, a source/drain pattern on the active pattern, a gate electrode on a channel pattern connected to the source/drain pattern, an active contact on the source/drain pattern, a first lower interconnection line on the active contact, a second lower interconnection line on the gate electrode, a first spacer between the gate electrode and the active contact, and a second spacer between the first spacer and the gate electrode or the active contact. The gate electrode includes an electrode body portion and an electrode protruding portion protruding from a top surface thereof and contacting the second lower interconnection line. The active contact includes a contact body portion and a contact protruding portion protruding from a top surface thereof and contacting the first lower interconnection line. A top surface of the first spacer is higher than a top surface of the second spacer.