18312811. METHOD OF FABRICATING SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
METHOD OF FABRICATING SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Byung Keun Hwang of Suwon-si (KR)
Young Hun Sung of Suwon-si (KR)
Youn Joung Cho of Suwon-si (KR)
METHOD OF FABRICATING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18312811 titled 'METHOD OF FABRICATING SEMICONDUCTOR DEVICE
Simplified Explanation
The method of fabricating a semiconductor device involves:
- Forming a first layer with a metal material and no acid.
- Forming a second layer with a trench exposing the first surface, containing an acid and organic material.
- Providing a first precursor with an alkoxy group and silicon.
- Forming a third layer of silicon oxide on the second surface within the trench, in contact with a portion of the first surface.
Potential applications of this technology:
- Semiconductor manufacturing
- Electronics industry
Problems solved by this technology:
- Improving semiconductor device fabrication process
- Enhancing performance and reliability of semiconductor devices
Benefits of this technology:
- Increased efficiency in semiconductor fabrication
- Better quality control in device manufacturing
- Enhanced functionality of semiconductor devices
Original Abstract Submitted
Provided is a method of fabricating a semiconductor device. The method of fabricating a semiconductor device comprises forming a first layer which has a first surface, does not comprise an acid, and comprises a metal material; forming, on the first layer, a second layer which comprises a trench exposing the first surface, has a second surface intersecting the first surface within the trench, and comprises an acid and an organic material; providing a first precursor comprising an alkoxy group and silicon; and forming a third layer comprising silicon oxide on the second surface within the trench. The third layer is in contact with a portion of the first surface within the trench.
