18513562. SEMICONDUCTOR DEVICE STRUCTURE INCLUDING FORKSHEET TRANSISTORS AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

SEMICONDUCTOR DEVICE STRUCTURE INCLUDING FORKSHEET TRANSISTORS AND METHODS OF FORMING THE SAME

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Jia-Ni Yu of New Taipei City (TW)

Kuo-Cheng Chiang of Hsinchu (TW)

Mao-Lin Huang of Hsinchu (TW)

Lung-Kun Chu of New Taipei City (TW)

Chung-Wei Hsu of Hsinchu (TW)

Chun-Fu Lu of Hsinchu (TW)

Chih-Hao Wang of Hsinchu (TW)

Kuan-Lun Cheng of Hsinchu (TW)

SEMICONDUCTOR DEVICE STRUCTURE INCLUDING FORKSHEET TRANSISTORS AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18513562 titled 'SEMICONDUCTOR DEVICE STRUCTURE INCLUDING FORKSHEET TRANSISTORS AND METHODS OF FORMING THE SAME

Simplified Explanation

The semiconductor device structure described in the abstract includes a first dielectric feature, a first semiconductor layer, a second dielectric feature, and a first gate electrode layer with a first air gap.

• The first dielectric feature consists of a first dielectric layer with two opposing sidewalls.
• The first semiconductor layer is positioned adjacent to one of the sidewalls of the first dielectric feature.
• The second dielectric feature is located adjacent to the first semiconductor layer.
• The first gate electrode layer surrounds at least three surfaces of the first semiconductor layer, with a portion exposed to a first air gap.

Potential Applications

This semiconductor device structure could be used in advanced electronic devices such as high-performance transistors, memory devices, and sensors.

Problems Solved

This technology helps in improving the performance and efficiency of semiconductor devices by reducing parasitic capacitance and enhancing device reliability.

Benefits

The benefits of this technology include increased device speed, reduced power consumption, improved signal integrity, and enhanced overall device performance.

Potential Commercial Applications

The potential commercial applications of this technology could be in the fields of telecommunications, computing, automotive electronics, and consumer electronics.

Possible Prior Art

One possible prior art could be the use of air gaps in semiconductor devices to reduce parasitic capacitance and improve device performance. Another could be the integration of dielectric features with semiconductor layers to enhance device reliability.

How does this technology compare to existing semiconductor device structures in terms of performance and efficiency?

This technology offers improved performance and efficiency compared to existing structures by reducing parasitic capacitance and enhancing device reliability.

What are the specific manufacturing processes involved in creating this semiconductor device structure?

The specific manufacturing processes involved in creating this semiconductor device structure may include deposition, etching, and patterning of dielectric and semiconductor layers, as well as the formation of gate electrode layers and air gaps.

Original Abstract Submitted

A semiconductor device structure, along with methods of forming such, are described. The semiconductor device structure includes a first dielectric feature extending along a first direction, the first dielectric feature comprising a first dielectric layer having a first sidewall and a second sidewall opposing the first sidewall, a first semiconductor layer disposed adjacent the first sidewall, the first semiconductor layer extending along a second direction perpendicular to the first direction, a second dielectric feature extending along the first direction, the second dielectric feature disposed adjacent the first semiconductor layer, and a first gate electrode layer surrounding at least three surfaces of the first semiconductor layer, and a portion of the first gate electrode layer is exposed to a first air gap.