18526828. CONTACT AIR GAP FORMATION AND STRUCTURES THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)

CONTACT AIR GAP FORMATION AND STRUCTURES THEREOF

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Sai-Hooi Yeong of Hsinchu County (TW)

Kai-Hsuan Lee of Hsinchu City (TW)

CONTACT AIR GAP FORMATION AND STRUCTURES THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 18526828 titled 'CONTACT AIR GAP FORMATION AND STRUCTURES THEREOF

Simplified Explanation

The method described in the abstract involves forming a device with an air gap spacer by depositing a sacrificial layer, removing portions of it to expose the source/drain structure, forming a metal plug, and then removing the remaining sacrificial layer to create the air gap.

• Transistor device formation method:

 * Provide a transistor with gate and source/drain structures.
 * Form a cavity along the sidewall surface of a contact opening.
 * Deposit a sacrificial layer over the contact opening.
 * Remove a portion of the sacrificial layer to expose the source/drain structure.
 * Form a metal plug over the exposed source/drain structure.
 * Remove the remaining sacrificial layer to create an air gap between the metal plug and the gate structure.
 * Deposit a seal layer over the air gap to form an air gap spacer.

Potential Applications

This technology could be applied in the manufacturing of advanced semiconductor devices, particularly in the development of high-performance transistors with improved insulation properties.

Problems Solved

This innovation addresses the challenge of reducing parasitic capacitance in transistors, which can improve overall device performance and efficiency.

Benefits

The use of air gap spacers can enhance the electrical characteristics of transistors, leading to faster operation, lower power consumption, and increased reliability.

Potential Commercial Applications

• High-speed processors
• Memory devices
• Communication systems

Possible Prior Art

There may be prior art related to the formation of air gap spacers in semiconductor devices, particularly in the field of transistor manufacturing processes.

How does this technology compare to existing methods for reducing parasitic capacitance in transistors?

This technology offers a unique approach to reducing parasitic capacitance by creating air gap spacers, but it would be beneficial to compare its effectiveness and efficiency with other existing methods.

What are the potential challenges or limitations of implementing air gap spacers in semiconductor devices?

While air gap spacers offer advantages in terms of insulation and performance, there may be challenges related to manufacturing complexity, reliability, and compatibility with existing processes that need to be explored further.

Original Abstract Submitted

A method of forming a device includes providing a transistor having a gate structure and a source/drain structure adjacent to the gate structure. A cavity is formed along a sidewall surface of a contact opening over the source/drain structure. After forming the cavity, a sacrificial layer is deposited over a bottom surface and along the sidewall surface of the contact opening including within the cavity. A first portion of the sacrificial layer along the bottom surface of the contact opening is removed to expose a portion of the source/drain structure. A metal plug is then formed over the portion of the exposed source/drain structure. A remaining portion of the sacrificial layer is removed to form an air gap disposed between the metal plug and the gate structure. Thereafter, a seal layer is deposited over the air gap to form an air gap spacer.