18149128. FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Te-Hsin Chiu of Miaoli County (TW)

Kam-Tou Sio of Zhubei City (TW)

Jiann-Tyng Tzeng of Hsinchu City (TW)

FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18149128 titled 'FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME

Simplified Explanation

The abstract describes a semiconductor device that includes a semiconductor substrate, two fins protruding from the substrate, and two epitaxial source/drain regions. These regions are laterally spaced apart by an air void.

• The semiconductor device includes a semiconductor substrate.
• The device has two fins protruding from the substrate.
• The fins extend along a first direction.
• There are two epitaxial source/drain regions coupled to the fins.
• The source/drain regions are laterally spaced apart by an air void.

Potential Applications:

• This semiconductor device can be used in various electronic devices such as smartphones, computers, and tablets.
• It can be utilized in the manufacturing of integrated circuits and microprocessors.

Problems Solved:

• The device solves the problem of reducing the size and increasing the efficiency of semiconductor devices.
• It addresses the need for improved performance and functionality in electronic devices.

Benefits:

• The semiconductor device allows for better heat dissipation due to the air void between the source/drain regions.
• It enables higher performance and faster processing speeds.
• The device offers improved power efficiency and reduced energy consumption.

Original Abstract Submitted

A semiconductor device includes a semiconductor substrate. The semiconductor device includes a first fin protruding from the semiconductor substrate and extending along a first direction. The semiconductor device includes a second fin protruding from the semiconductor substrate and extending along the first direction. A first epitaxial source/drain region coupled to the first fin and a second epitaxial source/drain region coupled to the second fin are laterally spaced apart from each other by an air void.