17832900. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
SEONGKYUNG Kim of Hwaseong-si (KR)
UKJIN Jung of Hwaseong-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17832900 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The patent application describes a semiconductor device that includes a substrate with different regions for logic cells and testing. It also includes active patterns, dummy patterns, device isolation layers, contact patterns, gate electrodes, gate contacts, and a metal layer.
- The semiconductor device has a substrate with logic cell and test regions.
- Active patterns are provided on the logic cell regions, while dummy patterns are provided on the test regions.
- Trenches define the active and dummy patterns, and a device isolation layer is placed in these trenches.
- A contact pattern is placed on the dummy pattern, and a gate electrode crosses the dummy regions.
- A gate contact is connected to the gate electrode, and a metal layer is placed on the gate contact.
- The metal layer includes two test lines that are connected to the contact pattern and the gate contact.
- The top surface of the active pattern is lower than the top surface of the dummy pattern.
Potential Applications
- Semiconductor manufacturing
- Integrated circuits
- Electronics industry
Problems Solved
- Efficient testing of semiconductor devices
- Improved device isolation and pattern definition
- Enhanced functionality of gate electrodes and contacts
Benefits
- Simplified testing process
- Better control over device isolation and pattern formation
- Increased performance and functionality of semiconductor devices
Original Abstract Submitted
A semiconductor device may include a substrate, which includes a logic cell region including first and second active regions and a test region including dummy regions, first and second active patterns provided on the first and second active regions, respectively, a dummy pattern provided on each of the dummy regions, a device isolation layer disposed in trenches defining each of the dummy pattern and the first and second active patterns, a contact pattern provided on the dummy pattern, a gate electrode provided to cross the dummy regions, a gate contact coupled to the gate electrode, and a metal layer on the gate contact. The metal layer may include two test lines provided on the test region and respectively coupled to the contact pattern and the gate contact. A top surface of the first active pattern may be lower than a top surface of the dummy pattern.
