17730797. Semiconductor Devices and Methods of Forming the Same simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
Contents
Semiconductor Devices and Methods of Forming the Same
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Jih-Sheng Yang of Hsinchu (TW)
Yu-Hsien Lin of Kaohsiung City (TW)
Ryan Chia-Jen Chen of Hsinchu (TW)
Semiconductor Devices and Methods of Forming the Same - A simplified explanation of the abstract
This abstract first appeared for US patent application 17730797 titled 'Semiconductor Devices and Methods of Forming the Same
Simplified Explanation
The patent application describes improved gate structures and methods for forming them in semiconductor devices. These gate structures include a high-k dielectric layer, a gate electrode, and a conductive cap with a convex top surface. First gate spacers are also included on opposite sides of the gate structure. Here are the key points:
- Gate structure in a semiconductor device
- High-k dielectric layer
- Gate electrode
- Conductive cap with a convex top surface
- First gate spacers on opposite sides of the gate structure
- High-k dielectric layer and conductive cap extend between opposite sidewalls of the first gate spacers
Potential applications of this technology:
- Semiconductor manufacturing
- Integrated circuits
- Transistors
- Memory devices
Problems solved by this technology:
- Improved gate structures for better performance and reliability
- Enhanced control of electrical properties in semiconductor devices
- Reduction of leakage current and power consumption
Benefits of this technology:
- Improved performance and efficiency of semiconductor devices
- Enhanced reliability and durability
- Better control over electrical properties
- Reduction in power consumption
Original Abstract Submitted
Improved gate structures, methods for forming the same, and semiconductor devices including the same are disclosed. In an embodiment, a semiconductor device includes a gate structure over a semiconductor substrate, the gate structure including a high-k dielectric layer; a gate electrode over the high-k dielectric layer; a conductive cap over and in contact with the high-k dielectric layer and the gate electrode, a top surface of the conductive cap being convex; and first gate spacers on opposite sides of the gate structure, the high-k dielectric layer and the conductive cap extending between opposite sidewalls of the first gate spacers.
