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Category:H01L21/02
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Pages in category "H01L21/02"
The following 200 pages are in this category, out of 487 total.
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- 17381006. INTEGRATED CIRCUIT WITH NANOSHEET TRANSISTORS WITH METAL GATE PASSIVATION simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17383444. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17384092. Dielectric Fin Structures With Varying Height simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17454830. FABRICATION OF A SEMICONDUCTOR DEVICE INCLUDING A QUANTUM DOT STRUCTURE simplified abstract (International Business Machines Corporation)
- 17455935. PARASITIC CAPACITANCE REDUCTION FOR TALL NANOSHEET DEVICES simplified abstract (International Business Machines Corporation)
- 17455937. REDUCED PARASITIC RESISTANCE TWO-DIMENSIONAL MATERIAL FIELD-EFFECT TRANSISTOR simplified abstract (International Business Machines Corporation)
- 17455941. STACKED NANOSHEET DEVICES WITH MATCHED THRESHOLD VOLTAGES FOR NFET/PFET simplified abstract (International Business Machines Corporation)
- 17457271. INTEGRATION OF HORIZONTAL NANOSHEET DEVICE AND VERTICAL NANO FINS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17457588. INTEGRATED INPUT OUTPUT AND LOGIC DEVICE FOR NANOSHEET TECHNOLOGY simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17459672. SHOWERHEAD ASSEMBLY AND METHOD OF SERVICING ASSEMBLY FOR SEMICONDUCTOR MANUFACTURING simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17461714. SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17487301. LATE REPLACEMENT BOTTOM ISOLATION FOR NANOSHEET DEVICES simplified abstract (International Business Machines Corporation)
- 17494101. STACKED COMPLEMENTARY FIELD EFFECT TRANSISTORS simplified abstract (International Business Machines Corporation)
- 17522015. BOTTOM CONTACT FOR STACKED GAA FET simplified abstract (International Business Machines Corporation)
- 17524884. SELECTIVE DEPOSITION ON METALS USING POROUS LOW-K MATERIALS simplified abstract (International Business Machines Corporation)
- 17528279. TUNNEL FIELD EFFECT TRANSISTOR DEVICES simplified abstract (International Business Machines Corporation)
- 17530971. SELECTIVE METAL RESIDUE AND LINER CLEANSE FOR POST-SUBTRACTIVE ETCH simplified abstract (International Business Machines Corporation)
- 17542563. SAM FORMULATIONS AND CLEANING TO PROMOTE QUICK DEPOSITIONS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17545610. STACKED FETS WITH NON-SHARED WORK FUNCTION METALS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17548913. NANOSHEET DEVICE WITH VERTICAL BLOCKER FIN simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17551402. FORMING NS GATES WITH IMPROVED MECHANICAL STABILITY simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17551463. NANOSHEET DEVICE WITH T-SHAPED DUAL INNER SPACER simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17567659. Semiconductor Device and Method of Forming Same simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17569057. STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE WITH EPITAXIAL STRUCTURES simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17575147. SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17581787. INTEGRATED CIRCUIT WITH CONDUCTIVE VIA FORMATION ON SELF-ALIGNED GATE METAL CUT simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17586310. SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17586705. METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR DEVICE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17590863. METHODS OF FORMING FIN-ON-NANOSHEET TRANSISTOR STACKS simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17592995. Fin Field-Effect Transistor Device and Method simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17629358. MANUFACTURING METHOD OF METAL GRID, THIN FILM SENSOR AND MANUFACTURING METHOD OF THIN FILM SENSOR simplified abstract (BOE TECHNOLOGY GROUP CO., LTD.)
- 17651329. Oxygen-Free Protection Layer Formation in Wafer Bonding Process simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17657822. Adjusting the Profile of Source/Drain Regions to Reduce Leakage simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17668452. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO.,LTD.)
- 17677929. DEVICE WITH ALTERNATE COMPLEMENTARY CHANNELS AND FABRICATION METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17690376. TWO-DIMENSIONAL MATERIAL STRUCTURE, SEMICONDUCTOR DEVICE INCLUDING THE TWO-DIMENSIONAL MATERIAL STRUCTURE, AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17697019. METHOD OF FORMING A PATTERN simplified abstract (Samsung Electronics Co., Ltd.)
- 17699463. FIELD EFFECT TRANSISTOR, ELECTRONIC APPARATUS INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE FIELD EFFECT TRANSISTOR simplified abstract (Samsung Electronics Co., Ltd.)
- 17700998. METAL GATE FIN ELECTRODE STRUCTURE AND METHOD simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17713014. Semiconductor Device and Method of Forming the Same simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17741711. METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 17804397. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 17816055. NOVEL METHOD OF FORMING WAFER-TO-WAFER BONDING STRUCTURE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17818933. 2D-MATERIAL GATE-ALL-AROUND COMPLEMENTARY FET INTEGRATION simplified abstract (QUALCOMM Incorporated)
- 17819639. INTEGRATED SEMICONDUCTOR PACKAGING SYSTEM WITH ENHANCED DIELECTRIC-TO-DIELECTRIC BONDING QUALITY simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17822726. MICROELECTRONIC DEVICES COMPRISING A BORON-CONTAINING MATERIAL, AND RELATED ELECTRONIC SYSTEMS AND METHODS simplified abstract (Micron Technology, Inc.)
- 17824129. SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17825798. Gate Structure Fabrication Techniques for Reducing Gate Structure Warpage simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17836399. SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17836452. SELECTIVE ETCHING METHOD AND SEMICONDUCTOR STRUCTURE MANUFACTURED USING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17836463. METHOD FOR FILLING TRENCH IN SEMICONDUCTOR DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17837048. METHOD OF FABRICATING VOID-FREE CONDUCTIVE FEATURE OF SEMICONDUCTOR DEVICE simplified abstract (NANYA TECHNOLOGY CORPORATION)
- 17837613. SEMICONDUCTOR DEVICE WITH DIELECTRIC LINERS ON GATE REFILL METAL simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17838246. SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17838253. SEMICONDUCTOR DEVICES AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17838646. SOURCE AND DRAIN CONTACTS FORMED USING SACRIFICIAL REGIONS OF SOURCE AND DRAIN simplified abstract (Intel Corporation)
- 17841184. SEMICONDUCTOR PACKAGE simplified abstract (Samsung Electronics Co., Ltd.)
- 17843970. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17847208. WET CLEANING TOOL AND METHOD simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17847625. SPUTTER TARGETS AND SOURCES FOR SELF-DOPED SOURCE AND DRAIN CONTACTS simplified abstract (Intel Corporation)
- 17848624. SILICON NITRIDE LAYER UNDER A COPPER PAD simplified abstract (Intel Corporation)
- 17849720. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17849725. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17850078. SELF-ASSEMBLED MONOLAYER ON A DIELECTRIC FOR TRANSITION METAL DICHALCOGENIDE GROWTH FOR STACKED 2D CHANNELS simplified abstract (Intel Corporation)
- 17850623. STACKED SINGLE CRYSTAL TRANSITION-METAL DICHALCOGENIDE USING SEEDED GROWTH simplified abstract (Intel Corporation)
- 17850714. METHOD OF MANUFACTURING SEMICONDUCTOR PACKAGE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17852658. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 17864938. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 17868401. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 17874738. METHOD OF MANUFACTURING INTEGRATED CIRCUIT USING ETCHING PROCESS simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17876036. METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE WITH MATERIAL IN MONOCRYSTALLINE PHASE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17878622. SUBSTRATE PROCESSING SYSTEM AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17882169. STACKED STRUCTURE INCLUDING TWO-DIMENSIONAL MATERIAL AND METHOD OF FABRICATING THE STACKED STRUCTURE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17886753. SEMICONDUCTOR DEVICE AND FORMATION METHOD THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17887122. METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17887273. SACRIFICIAL LAYER FOR SUBSTRATE ANALYSIS simplified abstract (Intel Corporation)
- 17894169. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17902111. MULTI BRIDGE CHANNEL FIELD EFFECT TRANSISTOR AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 17903159. INTEGRATED CIRCUIT DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 17931982. FIELD EFFECT TRANSISTOR WITH CHANNEL CAPPING LAYER simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17932557. HETEROGENEOUS GATE ALL AROUND DIELECTRIC THICKNESS simplified abstract (International Business Machines Corporation)
- 17933078. NON-PLANAR METAL-INSULATOR-METAL STRUCTURE simplified abstract (International Business Machines Corporation)
- 17936416. VERTICAL INVERTER FORMATION ON STACKED FIELD EFFECT TRANSISTOR (SFET) simplified abstract (International Business Machines Corporation)
- 17936934. METAL GATE CUT FORMED AFTER SOURCE AND DRAIN CONTACTS simplified abstract (Intel Corporation)
- 17943751. HEIGHT CONTROL IN NANOSHEET DEVICES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17945422. MULTI-VT SOLUTION FOR REPLACEMENT METAL GATE BONDED STACKED FET simplified abstract (International Business Machines Corporation)
- 17945888. HIGH PERFORMANCE 3D COMPACT TRANSISTOR ARCHITECTURE simplified abstract (TOKYO ELECTRON LIMITED)
- 17949418. METHOD OF FORMING TRANSITION METAL DICHALCOGENIDE THIN FILM simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17954960. SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17956157. SELECTIVE OXIDATION OF A SUBSTRATE simplified abstract (Applied Materials, Inc.)
- 17956296. TECHNOLOGIES FOR PEROVSKITE TRANSISTORS simplified abstract (Intel Corporation)
- 17957359. SINGULATION OF INTEGRATED CIRCUIT PACKAGE SUBSTRATES WITH GLASS CORES simplified abstract (Intel Corporation)
- 17957552. BACKSIDE WAFER TREATMENTS TO REDUCE DISTORTIONS AND OVERLAY ERRORS DURING WAFER CHUCKING simplified abstract (Intel Corporation)
- 17958094. TECHNOLOGIES FOR TRANSISTORS WITH A THIN-FILM FERROELECTRIC simplified abstract (Intel Corporation)
- 17958293. EPITAXIAL STRUCTURE AND GATE METAL STRUCTURES WITH A PLANAR TOP SURFACE simplified abstract (Intel Corporation)
- 17958362. TECHNOLOGIES FOR ATOMIC LAYER DEPOSITION FOR FERROELECTRIC TRANSISTORS simplified abstract (Intel Corporation)
- 17959189. CASSETTE STRUCTURES AND RELATED METHODS FOR BATCH PROCESSING IN EPITAXIAL DEPOSITION OPERATIONS simplified abstract (Applied Materials, Inc.)
- 17959606. BRUSHES, SYSTEMS, AND METHODS FOR DISPENSING MULTIPLE FLUIDS DURING CLEANING OF A SURFACE simplified abstract (ILLINOIS TOOL WORKS INC.)
- 17960277. SEMICONDUCTOR DEVICE WITH CHANNEL PATTERNS HAVING DIFFERENT WIDTHS simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17960569. CARBON REPLENISHMENT OF SILICON-CONTAINING MATERIAL simplified abstract (Applied Materials, Inc.)
- 17960979. DIELECTRIC ON DIELECTRIC SELECTIVE DEPOSITION USING ANILINE PASSIVATION simplified abstract (Applied Materials, Inc.)
- 17962233. 3D NANOSHEET STACK WITH DUAL SELECTIVE CHANNEL REMOVAL OF HIGH MOBILITY CHANNELS simplified abstract (Tokyo Electron Limited)
- 17962235. SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract (Tokyo Electron Limited)
- 17963591. SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 17963687. ISOTROPIC SILICON NITRIDE REMOVAL simplified abstract (Applied Materials, Inc.)
- 17981049. SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (TOYOTA JIDOSHA KABUSHIKI KAISHA)
- 17986119. Finfet Device Having A Channel Defined In A Diamond-Like Shape Semiconductor Structure simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18052726. INTEGRATED CIRCUIT DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18055357. METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18059660. ELECTRONIC DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18067703. STABILIZING DIELECTRIC STRESS IN A GALVANIC ISOLATION DEVICE simplified abstract (TEXAS INSTRUMENTS INCORPORATED)
- 18081948. SUBSTRATE DRYING DEVICE AND METHOD OF DRYING SUBSTRATE USING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18086380. METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, AND APPARATUS EMPLOYING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18088890. INTEGRATED CIRCUIT DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18089691. SUBSTRATE PROCESSING APPARATUS, SIGNAL SOURCE DEVICE, METHOD OF PROCESSING MATERIAL LAYER, AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18097323. CONTACT STRUCTURES WITH DEPOSITED SILICIDE LAYERS simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18098330. WAFER CLEANING APPARATUS, METHOD FOR CLEANING WAFER AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18100302. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18105648. SUBSTRATE PROCESS APPARATUS AND SUBSTRATE PROCESS METHOD USING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18108629. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18110950. SEMICONDUCTOR DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18119896. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18133242. SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18135927. SEMICONDUCTOR CHIP AND SEMICONDUCTOR PACKAGE INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18137339. LAYER DEPOSITION METHOD AND LAYER DEPOSITION APPARATUS simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18140905. INTEGRATED CIRCUIT DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18149495. FINFET EPI CHANNELS HAVING DIFFERENT HEIGHTS ON A STEPPED SUBSTRATE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18150524. Transistor Source/Drain Regions and Methods of Forming the Same simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18150861. Volume-less Fluorine Incorporation Method simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18151304. SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18151412. METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18151972. HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) HAVING AN INDIUM-CONTAINING LAYER AND METHOD OF MANUFACTURING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18152477. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18152715. TRIMMING METHOD simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18152938. SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18153633. SEMICONDUCTOR DEVICE INCLUDING TRENCH STRUCTURE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18153912. LOW-STRESS PASSIVATION LAYER simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18154218. DIELECTRIC THIN-FILM STRUCTURE AND ELECTRONIC DEVICE INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18154614. SEMICONDUCTOR STRUCTURE WITH NITRIDED INNER SPACERS AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18158276. CLEANING LIQUID NOZZLE, CLEANING APPARATUS, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18158305. SEMICONDUCTOR STRUCTURE, ELECTRONIC DEVICE, AND MANUFACTURE METHOD FOR SEMICONDUCTOR STRUCTURE simplified abstract (Huawei Technologies Co., Ltd.)
- 18158641. Semiconductor Device and Method of Manufacture simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18164600. SEMICONDUCTOR DEVICE AND MEHTOD OF FABRICATING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18170933. ETCHING-DAMAGE-FREE INTERMETAL DIELECTRIC LAYER WITH THERMAL DISSIPATION FEATURE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18175176. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18176692. METHOD OF DEPOSITING ATOMIC LAYER AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18177324. SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, INVERTER CIRCUIT, DRIVE DEVICE, VEHICLE, AND ELEVATOR simplified abstract (KABUSHIKI KAISHA TOSHIBA)
- 18188196. Metal-Insulator-Metal Capacitors And Methods Of Forming The Same simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18198064. METHODS FOR PATTERNING SUBSTRATES TO ADJUST VOLTAGE PROPERTIES simplified abstract (Applied Materials, Inc.)
- 18199578. LASER CRYSTALLIZATION APPARATUS AND LASER CRYSTALLIZATION METHOD simplified abstract (Samsung Display Co., LTD.)
- 18201251. METHOD OF FORMING FILM AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18209583. SILICON COMPOUND AND METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE USING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18213473. WIRE STRUCTURE, WIRE CAPACITOR INCLUDING WIRE STRUCTURE, AND ELECTRONIC DEVICE INCLUDING WIRE CAPACITOR simplified abstract (Samsung Electronics Co., Ltd.)
- 18225768. COATING COMPOSITION FOR WAFER PROTECTION AND METHOD OF MANUFACTURING SEMICONDUCTOR PACKAGE USING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18226854. SUBSTRATE PROCESSING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM AND SUBSTRATE PROCESSING APPARATUS simplified abstract (Kokusai Electric Corporation)
- 18231339. YTTRIUM COMPOUND, SOURCE MATERIAL FOR FORMING YTTRIUM-CONTAINING FILM, AND METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE USING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18236056. Integrated Circuitry, Method Used In The Fabrication Of A Vertical Transistor, And Method Used In The Fabrication Of Integrated Circuitry simplified abstract (Micron Technology, Inc.)
- 18237712. SPIN COATER AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE BY USING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18263920. SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS simplified abstract (Tokyo Electron Limited)
- 18264202. NITRIDE SEMICONDUCTOR EPITAXIAL SUBSTRATE, METHOD FOR PRODUCING SAME, AND NITRIDE SEMICONDUCTOR DEVICE simplified abstract (Panasonic Intellectual Property Management Co., Ltd.)
- 18274223. NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE simplified abstract (Mitsubishi Electric Corporation)
- 18296336. WAFER CLEANING EQUIPMENT simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18305752. NON-VOLATILE MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18306716. Isolation Regions For Isolating Transistors and the Methods Forming the Same simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18307526. SUBSTRATE CLEANING DEVICE AND SUBSTRATE CLEANING METHOD simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18312383. CAPACITOR, AND DEVICE COMPRISING THE SAME, AND METHOD OF PREPARING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18319850. PLASMA PROCESSING APPARATUS, WAFER TO WAFER BONDING SYSTEM AND WAFER TO WAFER BONDING METHOD simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18321275. SEMICONDUCTOR DEVICE INCLUDING TWO-DIMENSIONAL MATERIAL AND METHOD OF FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18340440. SEMICONDUCTOR DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18347817. LASER CRYSTALLIZATION MONITORING DEVICE AND METHOD OF LASER CRYSTALLIZATION MONITORING USING THE SAME simplified abstract (Samsung Display Co., Ltd.)
- 18357293. METHOD OF PROCESSING SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM simplified abstract (Kokusai Electric Corporation)
- 18359241. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (FUJI ELECTRIC CO., LTD.)
- 18367292. GATE CUT AND FIN TRIM ISOLATION FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION simplified abstract (Intel Corporation)
- 18370543. VERTICAL MEMORY DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 18377500. WAFER PROCESSING SYSTEM simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18378874. SEMICONDUCTOR DEVICE INCLUDING BLOCKING LAYER AND SOURCE/DRAIN STRUCTURE simplified abstract (Samsung Electronics Co., Ltd.)
- 18388419. Gate Structures For Semiconductor Devices simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18390952. GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES FABRICATED USING ALTERNATE ETCH SELECTIVE MATERIAL simplified abstract (Intel Corporation)
- 18395058. INNER SPACERS FOR GATE-ALL-AROUND SEMICONDUCTOR DEVICES simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18399205. MICROELECTRONICS PACKAGE COMPRISING A PACKAGE-ON-PACKAGE (POP) ARCHITECTURE WITH INKJET BARRIER MATERIAL FOR CONTROLLING BONDLINE THICKNESS AND POP ADHESIVE KEEP OUT ZONE simplified abstract (Intel Corporation)
- 18401989. SEMICONDUCTOR DEVICE PRE-CLEANING simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18402018. FIN FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18402859. Barrier-Free Approach for Forming Contact Plugs simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18402991. INTEGRATED STEALTH LASER FOR WAFER EDGE TRIMMING PROCESS simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18446583. METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (Kioxia Corporation)
- 18452311. WASHING SOLUTION AND WASHING METHOD FOR SEMICONDUCTOR SUBSTRATE simplified abstract (FUJIFILM Corporation)
- 18452581. CHANNEL STRUCTURES INCLUDING DOPED 2D MATERIALS FOR SEMICONDUCTOR DEVICES simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18469619. SUBSTRATE TREATMENT APPARATUS AND METHOD FOR TREATING SUBSTRATE simplified abstract (Kioxia Corporation)
- 18475803. SEMICONDUCTOR DEVICE INCLUDING TWO DIMENSIONAL MATERIAL simplified abstract (Samsung Electronics Co., Ltd.)
- 18477068. METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE WITH THIN FILM TRANSISTOR simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18478410. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
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