18488729. VERTICAL SEMICONDUCTOR COMPONENT ON THE BASIS OF GALLIUM NITRIDE WITH A STRUCTURED INTERMEDIATE LAYER simplified abstract (Robert Bosch GmbH)
Contents
- 1 VERTICAL SEMICONDUCTOR COMPONENT ON THE BASIS OF GALLIUM NITRIDE WITH A STRUCTURED INTERMEDIATE LAYER
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 VERTICAL SEMICONDUCTOR COMPONENT ON THE BASIS OF GALLIUM NITRIDE WITH A STRUCTURED INTERMEDIATE LAYER - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
VERTICAL SEMICONDUCTOR COMPONENT ON THE BASIS OF GALLIUM NITRIDE WITH A STRUCTURED INTERMEDIATE LAYER
Organization Name
Inventor(s)
Kevin Dannecker of Reutlingen (DE)
Stefan Regensburger of Renningen (DE)
VERTICAL SEMICONDUCTOR COMPONENT ON THE BASIS OF GALLIUM NITRIDE WITH A STRUCTURED INTERMEDIATE LAYER - A simplified explanation of the abstract
This abstract first appeared for US patent application 18488729 titled 'VERTICAL SEMICONDUCTOR COMPONENT ON THE BASIS OF GALLIUM NITRIDE WITH A STRUCTURED INTERMEDIATE LAYER
Simplified Explanation
The abstract describes a patent application for a vertical semiconductor component, such as a transistor, based on gallium nitride (GaN) with multiple vertically arranged electrodes.
- The semiconductor component is based on gallium nitride (GaN).
- It has at least two, preferably three, vertically arranged electrodes.
- The semiconductor layer structure includes a contact semiconductor layer contacted by a vertically lower electrode.
- An intermediate layer is used to compensate for the lattice mismatch between a foreign substrate and the contact semiconductor layer.
Potential Applications
This technology could be applied in high-frequency and high-power electronic devices, such as RF amplifiers, power converters, and radar systems.
Problems Solved
This technology addresses the challenge of lattice mismatch between the substrate and the semiconductor layer, which can lead to defects and reduced performance in semiconductor components.
Benefits
- Improved performance and reliability of vertical semiconductor components.
- Enhanced efficiency in high-power and high-frequency applications.
- Potential for miniaturization and cost reduction in electronic devices.
Potential Commercial Applications
"Vertical Gallium Nitride Semiconductor Component for High-Frequency Applications" could be a suitable title for this section. This technology could find commercial applications in telecommunications, aerospace, defense, and power electronics industries.
Possible Prior Art
There may be prior art related to vertical semiconductor components based on different semiconductor materials or with alternative approaches to addressing lattice mismatch in the semiconductor layer structure.
Unanswered Questions
How does this technology compare to existing vertical semiconductor components in terms of performance and efficiency?
This article does not provide a direct comparison with existing vertical semiconductor components in terms of performance metrics or efficiency gains.
What are the specific manufacturing processes involved in producing this vertical semiconductor component?
The article does not delve into the specific manufacturing processes involved in producing this vertical semiconductor component, such as deposition techniques, etching methods, or doping processes.
Original Abstract Submitted
A vertical semiconductor component, in particular transistor, with a semiconductor layer structure for forming a semiconductor component on the basis of gallium nitride (GaN) and at least two, preferably three, electrodes arranged vertically one above the other. The semiconductor layer structure includes a contact semiconductor layer contacted by a vertically lower electrode. An intermediate layer for compensating for the lattice mismatch between a non-comprised foreign substrate and the contact semiconductor layer is arranged vertically below the contact semiconductor layer in some regions.
