17384092. Dielectric Fin Structures With Varying Height simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)

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Dielectric Fin Structures With Varying Height

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Jhon Jhy Liaw of Hsinchu County (TW)

Dielectric Fin Structures With Varying Height - A simplified explanation of the abstract

This abstract first appeared for US patent application 17384092 titled 'Dielectric Fin Structures With Varying Height

Simplified Explanation

The patent application describes a semiconductor device that includes a fin structure made of semiconductor material on a substrate. There are two dielectric fin structures positioned underneath gate structures. The first dielectric fin structure is higher than the second dielectric fin structure.

  • The semiconductor device includes a fin structure made of semiconductor material.
  • There are two dielectric fin structures positioned underneath gate structures.
  • The first dielectric fin structure is higher than the second dielectric fin structure.

Potential Applications

This technology can be applied in various semiconductor devices, including but not limited to:

  • Integrated circuits
  • Microprocessors
  • Memory devices
  • Transistors

Problems Solved

The technology addresses the following problems in semiconductor devices:

  • Efficiently controlling the flow of electrical current
  • Reducing power consumption
  • Improving performance and speed of semiconductor devices

Benefits

The benefits of this technology include:

  • Enhanced control over electrical current flow
  • Improved power efficiency
  • Higher performance and faster operation of semiconductor devices


Original Abstract Submitted

A semiconductor device includes a semiconductor fin structure extending in a first direction on a substrate and a first dielectric fin structure extending parallel to the fin structure, the first dielectric fin structure being underneath a gate structure extending in a second direction that is perpendicular to the first direction. The device further includes a second dielectric fin structure extending parallel to the fin structure, the second dielectric feature being positioned beneath a gate cut feature. A top surface of the first dielectric fin structure is higher than a top surface of the second dielectric fin structure.

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