17963591. SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
Organization Name
Inventor(s)
Yong-Hoon Son of Yongin-si (KR)
Kwang-ho Park of Cheonan-si (KR)
Seungjae Jung of Suwon-si (KR)
SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 17963591 titled 'SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
Simplified Explanation
The semiconductor memory device described in the patent application consists of a stack structure with multiple layers vertically stacked on a substrate. Each layer includes a semiconductor pattern, a gate electrode, and a data storage element. The device also has vertical insulators arranged in a specific direction and a vertical bit line.
- The stack structure is made up of multiple layers vertically stacked on a substrate.
- Each layer includes a semiconductor pattern, a gate electrode, and a data storage element.
- The vertical insulators penetrate the stack structure and are arranged in a specific direction.
- The bit line is provided at the side of the stack structure and connects the stacked semiconductor patterns.
- Each vertical insulator consists of two adjacent insulators.
- The gate electrode includes a connection portion located between the two adjacent vertical insulators.
Potential applications of this technology:
- Memory devices: This semiconductor memory device can be used in various memory applications, such as computer systems, mobile devices, and data storage devices.
- Integrated circuits: The stack structure and vertical insulators can be integrated into various integrated circuits, enabling efficient data storage and retrieval.
Problems solved by this technology:
- Vertical stacking: The stack structure allows for efficient use of space, enabling higher memory capacity in a smaller footprint.
- Electrical connection: The bit line and gate electrode provide electrical connectivity between the stacked semiconductor patterns, ensuring proper data storage and retrieval.
Benefits of this technology:
- Increased memory capacity: The vertical stacking of semiconductor patterns allows for higher memory capacity in a compact design.
- Efficient data storage: The gate electrode and vertical insulators ensure proper electrical connection and data storage within the memory device.
- Space-saving design: The stack structure and vertical arrangement of insulators optimize the use of space, making it suitable for various electronic devices.
Original Abstract Submitted
A semiconductor memory device includes a stack structure comprising a plurality of layers vertically stacked on a substrate, each layer including a semiconductor pattern, a gate electrode extending in a first direction on the semiconductor pattern, and a data storage element electrically connected to the semiconductor pattern, a plurality of vertical insulators penetrating the stack structure, the vertical insulators arranged in the first direction, and a bit line provided at a side of the stack structure and extending vertically. The bit line electrically connects the semiconductor patterns which are stacked. Each of the vertical insulators includes first and second vertical insulators adjacent to each other. The gate electrode includes a connection portion disposed between the first and second vertical insulators.
