18319850. PLASMA PROCESSING APPARATUS, WAFER TO WAFER BONDING SYSTEM AND WAFER TO WAFER BONDING METHOD simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

PLASMA PROCESSING APPARATUS, WAFER TO WAFER BONDING SYSTEM AND WAFER TO WAFER BONDING METHOD

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

YONGIN Lee of SUWON-SI (KR)

DONGGAP Shin of SUWON-SI (KR)

WOOYOUNG Kim of SUWON-SI (KR)

BUMKI Moon of SUWON-SI (KR)

JIWON Moon of SUWON-SI (KR)

INHWA Baek of SUWON-SI (KR)

SEUNGDAE Seok of SUWON-SI (KR)

SIWOONG Woo of SUWON-SI (KR)

SEHOON Jang of SUWON-SI (KR)

PLASMA PROCESSING APPARATUS, WAFER TO WAFER BONDING SYSTEM AND WAFER TO WAFER BONDING METHOD - A simplified explanation of the abstract

This abstract first appeared for US patent application 18319850 titled 'PLASMA PROCESSING APPARATUS, WAFER TO WAFER BONDING SYSTEM AND WAFER TO WAFER BONDING METHOD

Simplified Explanation

The patent application describes a plasma processing apparatus that can switch between atmospheric and vacuum pressure states. It includes a load lock chamber for transferring substrates and a substrate processing apparatus for performing plasma processes on the substrate's surface under a vacuum atmosphere. The substrate processing apparatus consists of a substrate stage, a plasma gas supply, a steam supply, and a plasma generator.

• The load lock chamber can switch between atmospheric and vacuum pressure states.
• The substrate processing apparatus transfers substrates to and from the load lock chamber.
• The plasma process is performed on the substrate's surface in a plasma chamber under a vacuum atmosphere.
• The substrate stage supports the substrate within the plasma chamber.
• The plasma gas supply provides plasma gas into the plasma chamber.
• The steam supply supplies water vapor into the plasma chamber.
• The plasma generator generates a plasma in the plasma chamber.

Potential applications of this technology:

• Semiconductor manufacturing: The plasma processing apparatus can be used for etching, deposition, and cleaning processes in the fabrication of semiconductor devices.
• Display manufacturing: It can be utilized for plasma treatment of display substrates, such as OLED or LCD panels.
• Solar cell production: The apparatus can be employed for plasma processes in the manufacturing of solar cells.

Problems solved by this technology:

• Efficient substrate processing: The apparatus enables effective plasma processes on the substrate's surface under a vacuum atmosphere, ensuring precise and controlled results.
• Contamination prevention: The load lock chamber helps prevent contamination of the substrate during transfer, ensuring high-quality processing.
• Versatile plasma generation: The plasma generator allows for the generation of plasma using various gases, enabling a wide range of plasma processes.

Benefits of this technology:

• Improved process control: The apparatus provides precise control over plasma processes, resulting in enhanced product quality and yield.
• Time and cost savings: The ability to switch between atmospheric and vacuum pressure states reduces the time required for substrate transfer and processing, increasing overall efficiency.
• Versatility and flexibility: The apparatus can accommodate different substrate sizes and types, making it suitable for various industries and applications.

Original Abstract Submitted

A plasma processing apparatus includes a load lock chamber switchable between an atmospheric pressure state and a vacuum pressure state, and a substrate processing apparatus configured to transfer a substrate to and from the load lock chamber and to perform a plasma process on a surface of the substrate in a plasma chamber under a vacuum atmosphere. The substrate processing apparatus includes a substrate stage disposed within the plasma chamber and configured to support the substrate, a plasma gas supply configured to supply a plasma gas into the plasma chamber, a steam supply configured to supply a water vapor into the plasma chamber, and a plasma generator configured to generate a plasma in the plasma chamber.