18152477. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Chung-Ting Ko of Kaohsiung City (TW)

Yu-Cheng Shiau of Hsinchu (TW)

Li-Jung Kuo of Zhubei City (TW)

Sung-En Lin of Xionglin Township (TW)

Kuo-Chin Liu of Ji-an Township (TW)

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING - A simplified explanation of the abstract

This abstract first appeared for US patent application 18152477 titled 'SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING

Simplified Explanation

The abstract describes a semiconductor device and method of manufacture involving the modification of a dielectric material to create isolation regions with a desired geometry.

• Isolation regions are formed by modifying a dielectric material in a dielectric layer.
• The modification makes a first portion of the dielectric layer more easily removable by etching than a second portion.
• This modification allows for tuning the profile of the isolation regions to a desired geometry based on material properties.
• The method facilitates subsequent processing steps for creating isolation regions in semiconductor devices.

Potential Applications

• Semiconductor manufacturing
• Integrated circuit fabrication
• Electronic device production

Problems Solved

• Improving isolation between components in semiconductor devices
• Enhancing the performance and reliability of electronic devices
• Allowing for more precise control over the geometry of isolation regions

Benefits

• Increased efficiency in semiconductor manufacturing processes
• Improved functionality and performance of electronic devices
• Enhanced control over the design and layout of semiconductor components

Original Abstract Submitted

A semiconductor device and method of manufacture are provided. In some embodiments isolation regions are formed by modifying a dielectric material of a dielectric layer such that a first portion of the dielectric layer is more readily removed by an etching process than a second portion of the dielectric layer. The modifying of the dielectric material facilitates subsequent processing steps that allow for the tuning of a profile of the isolation regions to a desired geometry based on the different material properties of the modified dielectric material.