18137339. LAYER DEPOSITION METHOD AND LAYER DEPOSITION APPARATUS simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
LAYER DEPOSITION METHOD AND LAYER DEPOSITION APPARATUS
Organization Name
Inventor(s)
Hyungsuk Jung of Suwon-si (KR)
LAYER DEPOSITION METHOD AND LAYER DEPOSITION APPARATUS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18137339 titled 'LAYER DEPOSITION METHOD AND LAYER DEPOSITION APPARATUS
Simplified Explanation
The abstract describes a method for depositing a layer on a substrate within a chamber. This is achieved by alternately supplying a precursor gas and a reaction gas into the chamber to form at least one atomic layer. The surface of the atomic layer is then planarized by applying pressure to diffuse atoms with high curvature. The precursor gas and reaction gas are again supplied to form another atomic layer on the planarized layer.
- The method involves loading a substrate on a substrate stage within a chamber.
- Precursor gas and reaction gas are supplied alternately into the chamber.
- This forms at least one atomic layer on the substrate.
- The surface of the atomic layer is planarized by applying pressure.
- Pressure helps to diffuse atoms with high curvature on the surface.
- Precursor gas and reaction gas are supplied again to form another atomic layer on the planarized layer.
Potential Applications:
- Semiconductor manufacturing: This method can be used in the fabrication of semiconductor devices, where precise atomic layer deposition is required.
- Thin film coatings: The technique can be applied in industries that require thin film coatings, such as optical coatings, protective coatings, or functional coatings.
- Nanotechnology: The method can be utilized in nanoscale fabrication processes, enabling the precise deposition of atomic layers for various nanodevices.
Problems Solved:
- Curvature reduction: The planarization process helps to reduce the curvature of the atomic layer surface, ensuring a more uniform and smooth deposition.
- Atomic layer control: By alternating the supply of precursor and reaction gases, the method allows for precise control over the thickness and composition of the deposited atomic layers.
- Surface quality improvement: The diffusion of atoms with high curvature improves the overall surface quality of the atomic layer, reducing defects and enhancing performance.
Benefits:
- Enhanced deposition control: The method provides a high level of control over the deposition process, allowing for precise layer thickness and composition control.
- Improved surface quality: The planarization step improves the surface quality of the atomic layer, resulting in better device performance and reduced defects.
- Versatile applications: The technique can be applied in various industries requiring atomic layer deposition, enabling the production of advanced materials and devices.
Original Abstract Submitted
In a method of a method of depositing a layer, a substrate is loaded on a substrate stage within a chamber. A precursor gas and a reaction gas are alternately supplied into the chamber to form at least one atomic layer. A surface of the at least one atomic layer is planarized by applying pressure on the surface of the at least one atomic layer to diffuse atoms located on the surface having a relatively high curvature. The precursor gas and the reaction gas are alternately supplied into the chamber to form at least one atomic layer on the planarized atomic layer.
