18401989. SEMICONDUCTOR DEVICE PRE-CLEANING simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
- 1 SEMICONDUCTOR DEVICE PRE-CLEANING
SEMICONDUCTOR DEVICE PRE-CLEANING
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Li-Wei Chu of New Taipei City (TW)
Yu-Kai Chen of Taipei City (TW)
Wei-Yip Loh of Hsinchu City (TW)
Chih-Wei Chang of Hsin-Chu (TW)
Ming-Hsing Tsai of Chu-Pei City (TW)
SEMICONDUCTOR DEVICE PRE-CLEANING - A simplified explanation of the abstract
This abstract first appeared for US patent application 18401989 titled 'SEMICONDUCTOR DEVICE PRE-CLEANING
Simplified Explanation
The patent application describes the use of an ammonium fluoride gas to form a protection layer for various components of a semiconductor device during a pre-clean etch process. This protection layer is created by oversupplying nitrogen trifluoride, which leads to the increased formation of ammonium fluoride, coating the interlayer dielectric layers, insulating caps, and source/drain regions with a thick protective layer. This layer shields these components from being etched by fluorine ions generated during the pre-clean process.
- Ammonium fluoride gas used to form protection layer for semiconductor device components
- Oversupply of nitrogen trifluoride leads to increased formation of ammonium fluoride
- Protection layer shields interlayer dielectric layers, insulating caps, and source/drain regions from etching by fluorine ions
Potential Applications
The technology can be applied in the semiconductor industry for enhancing the durability and reliability of semiconductor devices during manufacturing processes.
Problems Solved
1. Protection of interlayer dielectric layers, insulating caps, and source/drain regions from etching during pre-clean processes. 2. Improving the overall performance and longevity of semiconductor devices.
Benefits
1. Enhanced protection for critical components of semiconductor devices. 2. Increased reliability and durability of semiconductor devices. 3. Improved manufacturing processes for semiconductor devices.
Potential Commercial Applications
Optimizing Semiconductor Manufacturing Processes with Ammonium Fluoride Gas Protection Layer
Possible Prior Art
There may be prior art related to the use of protective layers in semiconductor manufacturing processes, but specific examples of using ammonium fluoride gas for this purpose may be limited.
Unanswered Questions
How does the thickness of the protection layer impact the performance of the semiconductor device?
The thickness of the protection layer may affect the effectiveness of shielding the components from etching during the pre-clean process. Further research and testing could provide insights into the optimal thickness for maximizing protection without compromising device performance.
Are there any potential side effects or drawbacks associated with the use of an ammonium fluoride gas protection layer?
It is essential to investigate any potential side effects or unintended consequences of using an ammonium fluoride gas protection layer, such as compatibility issues with other materials or processes, environmental considerations, or long-term effects on device performance. Conducting thorough risk assessments and evaluations can help address these concerns.
Original Abstract Submitted
An ammonium fluoride gas may be used to form a protection layer for one or more interlayer dielectric layers, one or more insulating caps, and/or one or more source/drain regions of a semiconductor device during a pre-clean etch process. The protection layer can be formed through an oversupply of nitrogen trifluoride during the pre-clean etch process. The oversupply of nitrogen trifluoride causes an increased formation of ammonium fluoride, which coats the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) with a thick protection layer. The protection layer protects the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) during the pre-clean process from being etched by fluorine ions formed during the pre-clean process.
