18089691. SUBSTRATE PROCESSING APPARATUS, SIGNAL SOURCE DEVICE, METHOD OF PROCESSING MATERIAL LAYER, AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
SUBSTRATE PROCESSING APPARATUS, SIGNAL SOURCE DEVICE, METHOD OF PROCESSING MATERIAL LAYER, AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Sung-gil Kang of Hwaseong-si (KR)
Min-seop Park of Hwaseong-si (KR)
Jae-jik Baek of Seongnam-si (KR)
In-hye Jeong of Changnyeong-gun (KR)
SUBSTRATE PROCESSING APPARATUS, SIGNAL SOURCE DEVICE, METHOD OF PROCESSING MATERIAL LAYER, AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18089691 titled 'SUBSTRATE PROCESSING APPARATUS, SIGNAL SOURCE DEVICE, METHOD OF PROCESSING MATERIAL LAYER, AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE
Simplified Explanation
The patent application describes a substrate processing apparatus that is used to obtain a smooth etched surface for a crystalline material layer without the risk of device damage by RDC (residual damage caused by plasma etching).
- The substrate processing apparatus includes a processing chamber, a susceptor, and two plasma generators.
- The susceptor is located in the processing chamber and is designed to support a substrate.
- The first plasma generator is positioned on one side of the processing chamber.
- The second plasma generator is positioned on the other side of the processing chamber and is configured to generate plasma by simultaneously supplying a sinusoidal wave signal and a non-sinusoidal wave signal to the susceptor.
Potential applications of this technology:
- Semiconductor manufacturing: This substrate processing apparatus can be used in the production of semiconductor devices, where a smooth etched surface is crucial for device performance.
- Optoelectronics: The technology can also be applied in the manufacturing of optoelectronic devices, such as LEDs and solar cells, to achieve high-quality surface finishes.
Problems solved by this technology:
- Smooth etched surface: The apparatus and method described in the patent application address the challenge of obtaining a smooth etched surface for crystalline material layers, which is important for the functionality and performance of various electronic and optoelectronic devices.
- Device damage prevention: By using a combination of sinusoidal and non-sinusoidal wave signals, the risk of device damage caused by residual damage from plasma etching is minimized.
Benefits of this technology:
- Improved device performance: The smooth etched surface achieved with this technology can enhance the performance of semiconductor and optoelectronic devices.
- Reduced device failure: By minimizing the risk of device damage during the etching process, the technology helps to reduce the likelihood of device failure and increase overall device reliability.
Original Abstract Submitted
A substrate processing apparatus includes a processing chamber; a susceptor provided in the processing chamber, wherein the susceptor is configured to support a substrate; a first plasma generator disposed on one side of the processing chamber; and a second plasma generator disposed on another side of the processing chamber, wherein the second plasma generator is configured to generate plasma by simultaneously supplying a sinusoidal wave signal and a non-sinusoidal wave signal to the susceptor. By using a substrate processing apparatus, a signal source device, and a method of processing a material layer according to the inventive concept, a smooth etched surface may be obtained for a crystalline material layer without a risk of device damage by RDC.
