17848624. SILICON NITRIDE LAYER UNDER A COPPER PAD simplified abstract (Intel Corporation)

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SILICON NITRIDE LAYER UNDER A COPPER PAD

Organization Name

Intel Corporation

Inventor(s)

Brandon C. Marin of Gilbert AZ (US)

Suddhasattwa Nad of Chandler AZ (US)

Srinivas V. Pietambaram of Chandler AZ (US)

Gang Duan of Chandler AZ (US)

Jeremy D. Ecton of Gilbert AZ (US)

Kristof Darmawikarta of Chandler AZ (US)

Sameer Paital of Chandler AZ (US)

SILICON NITRIDE LAYER UNDER A COPPER PAD - A simplified explanation of the abstract

This abstract first appeared for US patent application 17848624 titled 'SILICON NITRIDE LAYER UNDER A COPPER PAD

Simplified Explanation

The patent application is about a method of forming an LGA (Land Grid Array) pad on a substrate with a layer of silicon nitride between the pad and the dielectric layer of the substrate. The purpose of this method is to reduce insertion loss by minimizing the capacitance between the LGA pad and metal routings within the substrate.

  • The method involves creating a smaller LGA pad on the substrate compared to traditional pads.
  • A layer of silicon nitride is added between the LGA pad and the dielectric layer to provide additional mechanical support.
  • The reduced footprint of the LGA pad helps to decrease the resulting capacitance and improve performance.
  • The invention can be applied to various systems, apparatuses, or processes that require LGA pads on substrates.
  • The use of silicon nitride as a support layer can enhance the mechanical stability of the LGA pad.
  • The reduced insertion loss achieved by this method can improve the overall performance of electronic devices.

Potential Applications

This technology can be applied in various electronic devices and systems that require LGA pads on substrates, such as:

  • Printed circuit boards (PCBs)
  • Integrated circuits (ICs)
  • Microprocessors
  • Memory modules
  • Communication devices

Problems Solved

The technology addresses the following problems:

  • Insertion loss caused by the capacitance between LGA pads and metal routings within the substrate.
  • Footprint limitations of traditional LGA pads.
  • Mechanical stability of LGA pads on substrates.

Benefits

The benefits of this technology include:

  • Reduced insertion loss, leading to improved performance of electronic devices.
  • Smaller footprint of LGA pads, allowing for more efficient use of space on the substrate.
  • Enhanced mechanical support provided by the silicon nitride layer, increasing the stability of the LGA pad.


Original Abstract Submitted

Embodiments herein relate to systems, apparatuses, or processes directed to forming an LGA pad on a side of a substrate, with a layer of silicon nitride between the LGA pad and a dielectric layer of the substrate. The LGA pad may have a reduced footprint, or a reduced lateral dimension with respect to a plane of the substrate, as compared to legacy LGA pads to reduce insertion loss by reducing the resulting capacitance between the reduced LGA footprint and metal routings within the substrate. The layer of silicon nitride may provide additional mechanical support for the reduced footprint. Other embodiments may be described and/or claimed.

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