18177324. SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, INVERTER CIRCUIT, DRIVE DEVICE, VEHICLE, AND ELEVATOR simplified abstract (KABUSHIKI KAISHA TOSHIBA)
Contents
- 1 SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, INVERTER CIRCUIT, DRIVE DEVICE, VEHICLE, AND ELEVATOR
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, INVERTER CIRCUIT, DRIVE DEVICE, VEHICLE, AND ELEVATOR - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, INVERTER CIRCUIT, DRIVE DEVICE, VEHICLE, AND ELEVATOR
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, INVERTER CIRCUIT, DRIVE DEVICE, VEHICLE, AND ELEVATOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 18177324 titled 'SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, INVERTER CIRCUIT, DRIVE DEVICE, VEHICLE, AND ELEVATOR
Simplified Explanation
The semiconductor device described in the abstract includes a silicon carbide layer, a silicon oxide layer with a peak frequency of a longitudinal wave optical mode of 1245 cm or more, and a region with a high nitrogen concentration located between the two layers.
- Silicon carbide layer
- Silicon oxide layer with peak frequency of 1245 cm or more
- Region with nitrogen concentration of 1×10^20 cm or more
- Concentration distribution of nitrogen peaks in the region
Potential Applications
The technology described in this patent application could be applied in:
- High-frequency electronic devices
- Power electronics
- Optoelectronics
Problems Solved
This technology addresses the following issues:
- Enhancing device performance
- Improving signal transmission
- Increasing device efficiency
Benefits
The benefits of this technology include:
- Higher device reliability
- Improved signal quality
- Enhanced device durability
Potential Commercial Applications
The potential commercial applications of this technology could be in:
- Telecommunications industry
- Automotive sector
- Aerospace industry
Possible Prior Art
There is no prior art known at this time for this specific technology.
Unanswered Questions
How does this technology compare to traditional semiconductor devices in terms of performance and efficiency?
This article does not provide a direct comparison between this technology and traditional semiconductor devices. Further research or testing may be needed to determine the performance differences.
What are the potential challenges in scaling up the production of semiconductor devices using this technology?
The article does not address the scalability of production using this technology. Additional studies or experiments may be required to evaluate the challenges in large-scale manufacturing.
Original Abstract Submitted
A semiconductor device according to an embodiment includes a silicon carbide layer, a silicon oxide layer having a peak frequency of a longitudinal wave optical mode of 1245 cmor more at a position 0.5 nm away from the silicon carbide layer, and a region located between the silicon carbide layer and the silicon oxide layer and having a nitrogen concentration of 1×10cmor more. The concentration distribution of nitrogen in the silicon carbide layer, the silicon oxide layer, and the region has a peak in the region.
