17586705. METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR DEVICE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)

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METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR DEVICE

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Shahaji B. More of Hsinchu City (TW)

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 17586705 titled 'METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR DEVICE

Simplified Explanation

The patent application describes a method of manufacturing a semiconductor device. Here are the key points:

  • The method involves forming multiple fin structures and wall fin structures on a substrate.
  • The lower portions of these structures are embedded in an isolation insulating layer, while the upper portions are exposed.
  • A sidewall spacer layer is formed on the sidewalls of the fin structures.
  • The source/drain regions of the fin structures are recessed.
  • An epitaxial source/drain structure is formed over the recessed fin structures.
  • The width of the fin structures is smaller than the thickness of the sidewall spacer layer.

Potential applications of this technology:

  • This method can be used in the manufacturing of various semiconductor devices, such as transistors and integrated circuits.
  • It can help improve the performance and efficiency of these devices by optimizing the structure and placement of the fin structures.

Problems solved by this technology:

  • The method provides a way to embed the lower portions of the fin structures in an isolation insulating layer, which helps in isolating the different components of the semiconductor device.
  • By recessing the source/drain regions and forming an epitaxial structure, the method helps in reducing resistance and improving the electrical characteristics of the device.

Benefits of this technology:

  • The method allows for the precise formation and placement of the fin structures, which can lead to improved device performance.
  • By optimizing the structure and placement of the fin structures, the method can help in reducing power consumption and increasing the speed of the semiconductor device.


Original Abstract Submitted

In a method of manufacturing a semiconductor device, a first fin structure, a second fin structure, a first wall fin structure and a second wall fin structure are formed over a substrate. The first and second fin structures are disposed between the first and second wall fin structures, and lower portions of the first and second fin structures and the first and second wall fin structures are embedded in the isolation insulating layer and upper portions thereof are exposed from the isolation insulating layer. A sidewall spacer layer is formed on sidewalls of the first and second fin structures. Source/drain regions of the first and second fin structures are recessed. An epitaxial source/drain structure is formed over the recessed first and second fin structures. A width W of the first and second fin structures is smaller than a thickness W of the sidewall spacer layer.

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